Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related techologies

[11p-A23-1~13] 13.5 Semiconductor devices and related techologies

Wed. Mar 11, 2015 2:00 PM - 5:30 PM A23 (6A-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[11p-A23-1] Experimental Study on 2D-Si Layers for Future Several-nm CMOS (X)

〇Yuya Suzuki¹, Yoshiki Nagamine¹, Takashi Aoki¹, Tomohisa Mizuno¹, Taturo Maeda² (1.Kanagawa Univ., 2.AIST)

2:15 PM - 2:30 PM

[11p-A23-2] Experimental Study on 2D-Si Layers for Future Several-nm CMOS(XI)

〇yoshiki nagamine¹, Yuuya suzuki¹, Takashi Aoki¹, Tomohisa Mizuno¹ (1.Kanagawa Univ.)

2:30 PM - 2:45 PM

[11p-A23-3] Fabrication method for coupled series-triple quantum dots using pattern-dependent oxidation

〇Takahumi Uchida¹, Isamu Yoshioka¹, Hikaru Satoh¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (1.IST. Hokkaido Univ., 2.NTT-BRL.)

2:45 PM - 3:00 PM

[11p-A23-4] Fabrication and evaluation of highly controllable Si-MOS quantum dot device

〇Takumu Honda¹, Tetsuo Kodera^4,⁵, Jun Yoneda³, Kenta Takeda², Seigo Tarucha^2,^3,⁵, Shunri Oda¹ (1.QNERC-Tokyo Tech., 2.The Univ. of Tokyo, 3.RIKEN, 4.Tokyo Tech, 5.NanoQuine-The Univ. of Tokyo)

3:00 PM - 3:15 PM

[11p-A23-5] Dopat Atom MOSFET by Low-concentration Phosphorus Doping

〇Yuki Takasu¹, Moraru Daniel², Takeshi Mizuno¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.Shizuoka Univ.)

3:15 PM - 3:30 PM

▲ [11p-A23-6] First-principle calculations of the interactions between single phosphorus donor and boron acceptor in the P-B co-doped silicon nanostructures

〇(P)Le The Anh¹, Daniel Moraru², Manoharan Muruganathan¹, Michiharu Tabe², Hiroshi Mizuta^1,³ (1.JAIST, 2.Shizuoka Univ., 3.Univ. of Southampton)

Break (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[11p-A23-7] Possibility of ballistic transport in MOSFETs assessed by a compact model

〇Kenji Natori¹ (1.Tokyo Inst. Tech.)

4:00 PM - 4:15 PM

[11p-A23-8] Charge Pumping (CP) Characteristics of Single Si/SiO₂ Interface Traps: Direct and Electrical Observation of P_b0 Centers and Fundamental Improvement of the Conventional CP Theory

〇Toshiaki Tsuchiya¹, Yukinori Ono² (1.Shimane Univ., 2.Univ. of Toyama)

4:15 PM - 4:30 PM

△ [11p-A23-9] Analysis of electron capture process using time-domain measurement of charge pumping current

〇Masahiro Hori¹, Tokinobu Watanabe¹, Tsuchiya Toshiaki², Yukinori Ono¹ (1.Univ. of Toyama, 2.Shimane Univ.)

4:30 PM - 4:45 PM

[11p-A23-10] Direct observation of electron emission and recombination processes by time domain CP method

〇Masahiro Hori¹, Tokinobu Watanabe¹, Tsuchiya Toshiaki², Yukinori Ono¹ (1.Univ. of Toyama, 2.Shimane Univ.)

4:45 PM - 5:00 PM

[11p-A23-11] Single-electron transport via deep level in Al-N-implanted short-channel tunnel field-effect transistor (TFET)

〇Keiji Ono¹, Takahiro Mori², Satoshi Moriyama³ (1.RIKEN, 2.AIST, 3.NIMS)

5:00 PM - 5:15 PM

[11p-A23-12] First-Principles Calculation of Electronic Properties of Isoelectronic Impurity Complex in Si TFET

〇(DC)Shota Iizuka¹, Takashi Nakayama¹ (1.Chiba Univ.)

5:15 PM - 5:30 PM

[11p-A23-13] EDMR observation of recombination current in silicon PN junction

〇(M2)KEIGO FURUTA¹, Yukinori Ono¹, Yuuki Nishiuchi¹, Taiki Mitani¹, Masahiro Hori¹ (1.Univ. of Toyama)

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