Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[11p-C1-1~17] 6.2 Carbon-based thin films

Wed. Mar 11, 2015 1:15 PM - 6:00 PM C1 (6C-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[11p-C1-1] Effects of substrate temperature and nitrogen introduction on single-crystalline growth by plasma CVD

〇Hideaki Yamada¹, Akiyoshi Chayahara¹, Yoshiaki Mokuno¹ (1.AIST)

1:30 PM - 1:45 PM

[11p-C1-2] Misorientation angle dependence of homoepitaxial growth on (001) heavily boron-doped diamond

〇(DC)Hiroyuki Kawashima^1,^2,³, Hiromitsu Kato^2,³, Masahiko Ogura^2,³, Toshiharu Makino^2,³, Daisuke Takeuchi^2,³, Satoshi Yamasaki^1,^2,³ (1.Univ. of Tsukuba, 2.AIST, 3.JST/CREST)

1:45 PM - 2:00 PM

△ [11p-C1-3] Evaluation of superconducting boron-doped diamond thin film critical thickness using X-ray diffraction

〇(B)Masanobu SHIBATA¹, Taisuke Kageura¹, Takahide Yamaguchi², Yoshihiko Takano², Kawarada Hiroshi¹ (1.Waseda Univ., 2.NIMS)

2:00 PM - 2:15 PM

[11p-C1-4] Characterization of heavily phosphorus doped n-type diamond thin films

〇(PC)Ryota Ohtani¹, Takashi Yamamoto¹, Satoshi Koizumi¹ (1.NIMS)

2:15 PM - 2:30 PM

[11p-C1-5] X-ray Topography Observation of (110) HPHT type-IIa Diamond Single Crystal

〇Makoto Kasu¹, Ryuichi Murakami¹, Satoshi Masuya¹, Takuya Uematsu¹, Hitoshi Sumiya² (1.Saga Univ., 2.Sumitomo Electric.)

2:30 PM - 2:45 PM

▼ [11p-C1-6] Direct observation and mechanism for enhanced electron emission sites in Pt ion implanted/post-annealed ultra nanocrystalline diamond films

〇(PC)Kalpataru Panda¹, Eiichi Inami¹, K. J Sankaran², Yoshiaki Sugimoto¹, N-H Tai², I-Nan Lin³ (1.Osaka Univ., 2.NTHU, 3.Tamkang Univ.)

Break (2:45 PM - 3:00 PM)

3:00 PM - 3:15 PM

△ [11p-C1-7] Heteroepitaxial growth of diamond on Ir by grid-patterned nucleation region

〇Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.TOPLAS ENGINEERING CO.)

3:15 PM - 3:30 PM

[11p-C1-8] Heteroepitaxial growth of diamond on cubic boron nitride (c-BN) thin films

〇Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹ (1.NTT BRL)

3:30 PM - 3:45 PM

[11p-C1-9] Band diagram for chemical vapor deposition diamond surface conductive layer: Reconfirmation of downward band bending very near the surface

〇Shozo Kono¹, Daisuke Takeuchi², Hideyuki Kodama¹, Atsuhito SAwabe¹ (1.Aoyama Gakuin Univ., 2.AIST)

3:45 PM - 4:00 PM

△ [11p-C1-10] ATP detection via aptamer by diamond surface control

〇(B)takuro naramura¹, Evi Suaebah¹, Miho Myodo¹, Mikinori Kobayasi¹, Masafumi Inaba¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

Break (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

[11p-C1-11] (111) diamond growth for fabrication of ensemble NV centers

〇Hayato Ozawa¹, Takayuki Iwasaki^1,², Kousuke Tahara¹, Satoko Furuyama¹, Maki Shimizu^1,², Mutsuko Hatano^1,² (1.Titech, 2.CREST)

4:30 PM - 4:45 PM

[11p-C1-12] Alignment and preferential orientation of nitrogen-vacancy centers formed during chemical vapor deposition diamond growth on (111) surfaces

〇Tokuyuki Teraji¹, Julia Michl², Sebastian Zaiser², Ingmar Yakobi², Gerald Waldherr², Florian Dolde², Philipp Neumann², Marcus Doherty³, Neil Manson³, Junichi Isoya⁴, Jorg Wrachtrup² (1.NIMS, 2.Univ. Stuttgart, 3.Australian National Univ., 4.Univ. Tsukuba)

4:45 PM - 5:00 PM

[11p-C1-13] Alignment mechanism of nitrogen-vacancy complex defects in diamond (111) substrates

〇Takehide Miyazaki^1,², Yoshiyuki Miyamoto^1,², Toshiharu Makino^1,³, Hiromitsu Kato^1,³, Satoshi Yamasaki^1,³, Takahiro Fukui^1,⁴, Yuki Doi^1,⁴, Norio Tokuda⁵, Mutsuko Hatano^1,⁶, Norikazu Mizuochi^1,⁴ (1.JST-CREST, 2.AIST-NRI, 3.AIST-ETRI, 4.Osaka Univ., 5.Kanazawa Univ., 6.Tokyo Inst. Technol.)

5:00 PM - 5:15 PM

[11p-C1-14] Charge state control of NV center in diamond by phosphorus donor

〇Yuki Doi¹, Takahiro Fukui¹, Hiromitsu Kato^2,³, Toshiharu Makino^2,³, Satoshi Yamasaki^2,³, Toshiyuki Tashima¹, Hiroki Morishita¹, Shinji Miwa¹, Fedor Jelezko⁴, Yoshishige Suzuki¹, Norikazu Mizuochi^1,³ (1.Osaka Univ., 2.AIST, 3.CREST, 4.Ulm Univ.)

5:15 PM - 5:30 PM

[11p-C1-15] Fabrication of NV centers in diamond JFET for electric field sensing

〇Wataru Naruki¹, Kosuke Tahara¹, Takayuki Iwasaki^1,³, Hiromitsu Kato^2,³, Toshiharu Makino^2,³, Masahiko Ogura^2,³, Daisuke Takeuchi^2,³, Satoshi Yamasaki^2,³, Mutsuko Hatano^1,³ (1.Tokyo tech., 2.AIST, 3.CREST)

5:30 PM - 5:45 PM

[11p-C1-16] Collection Efficiency Improvement of NV center by Selective Growth of Diamond

〇Satoko Furuyama¹, Takayuki Iwasaki^1,², Maki Shimizu^1,², Junya Yaita¹, Tetsuo Kodera^1,², Mutsuko Hatano^1,² (1.Tokyo Tech., 2.CREST-JST)

5:45 PM - 6:00 PM

[11p-C1-17] Introdction of SiV center in CVD diamond film by ion implantation

〇yuta osoekawa¹, nakao motoi¹, tsubota toshiki¹, nagamachi shinji² (1.Kyushu institute of Technology, 2.Nagamachi Science Laboratory Co.,Ltd.)

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