Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[11p-D7-1~14] 15.5 Group IV crystals and alloys

Wed. Mar 11, 2015 1:30 PM - 5:15 PM D7 (16-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[11p-D7-1] Realization of high Sn concentration GeSn on Insulator by solid-phase technique

〇Ryo Matsumura^1,², Masaya Sasaki¹, Hironori Chikita¹, Yuki Kai¹, Taizoh Sadoh¹, Masanobu Miyao¹ (1.Dept. Electronics, Kyushu Univ., 2.JSPS Research Fellow)

1:45 PM - 2:00 PM

[11p-D7-2] Seeded Lateral Solid-Phase Crystallization of GeSn/Insulator (1)

〇Yuki Kai¹, Hironori Chikita¹, Ryo Matsumura^1,², Taizoh Sadoh¹, Masanobu Miyao¹ (1.Dept. Electronics, Kyushu Univ., 2.JSPS Research Fellow)

2:00 PM - 2:15 PM

△ [11p-D7-3] Seeded Lateral Solid-Phase Crystallization of GeSn/Insulator (2)

〇Yuki Kai¹, Hironori Chikita¹, Ryo Matsumura^1,², Taizoh Sadoh¹, Masanobu Miyao¹ (1.Dept. Electronics, Kyushu Univ., 2.JSPS Research Fellow)

2:15 PM - 2:30 PM

[11p-D7-4] Laser Annealed Seeding Solid Phase Crystallization of GeSn on Insulator (3)

〇Ryo Matsumura^1,², Hironori Chikita¹, Taizoh Sadoh¹, Hiroshi Ikenoue¹, Masanobu Miyao¹ (1.IEEE, Kyushu Univ., 2.JSPS Research Fellow)

2:30 PM - 2:45 PM

△ [11p-D7-5] Laser Annealing Condition in Crystallization of Germanium Flim on Amorphous Substrate with (111) Orientation

〇Toru Takao¹, Masahiro Horita¹, Yoshiaki Nieda¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech.)

2:45 PM - 3:00 PM

△ [11p-D7-6] Thermal diffusion simulation of Ge films crystallization by laser annealing

〇Yoshiaki Nieda¹, Masahiro Horita¹, Toru Takao¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech.)

3:00 PM - 3:15 PM

[11p-D7-7] Difference in behavior of Si and Ge atoms for FLA crystallization

〇Naoto Matsuo¹, Shota Hirano¹, Akira Heya¹, Yoshiaki Nakamura², Takehiko Yokomori², Masaki Yoshioka² (1.Univ. of Hyogo, 2.USHIO INC.)

Break (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

[11p-D7-8] Fabrication of a pseudo-single-crystalline germanium film on flexible substrates

〇hidenori higashi¹, Kenji Kasahara², Kohei Kudo³, Hayato Okamoto³, Kenta Moto³, Jong-Hyeok Park², Shinya Yamada¹, Takeshi Kanashima¹, Masanobu Miyao², Isao Tsunoda³, Kohei Hamaya¹ (1.GSES, Osaka Univ., 2.Electronics, Kyushu Univ., 3.Kumamoto Coll. Tech.)

3:45 PM - 4:00 PM

[11p-D7-9] Electrical properties of a pseudo-single-crystalline germanium grown by gold-induced layer exchange crystallization

〇Mario Nakano¹, Hidenori Higashi¹, Kenji Kasahara², Shinya Yamada¹, Takeshi Kanashima¹, Kohei Hamaya¹ (1.GSES,Osaka Univ., 2.Electronics,Kyushu Univ.)

4:00 PM - 4:15 PM

[11p-D7-10] A crystalline Ge channel TFT fabricated below 300 ^oC process

〇Kenji Kasahara¹, Yuta Nagatomi², Keisuke Yamamoto², Hidenori Higashi³, Mario Nakano³, Shinya Yamada³, Takeshi Kanashima³, Hiroshi Nakashima², Kohei Hamaya³ (1.Electronics, Kyushu Univ., 2.KASTEC, Kyushu Univ., 3.GSES, Osaka Univ.)

4:15 PM - 4:30 PM

[11p-D7-11] Sn doping effects on Al-induced crystallization of amorphous Ge thin films on glass

〇(M1)Naoki Oya¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

4:30 PM - 4:45 PM

[11p-D7-12] Aligned Ge nanowires on glass seeded by a (111)-oriented Ge thin film

〇(B)Mitsuki Nakata¹, Kaoru Toko¹, Wipakorn Jevasuwan², Naoki Fukata², Takashi Suemasu¹ (1.Univ. of Tsukuba, 2.NIMS)

4:45 PM - 5:00 PM

[11p-D7-13] Annealing temperature dependent Au induced crystallization of a-Ge/Au/SiO₂ structure

〇kohei kudo¹, tatsushi nomitsu¹, hayato okamoto¹, kenichiro takakura¹, isao tsunoda¹ (1.KNCT)

5:00 PM - 5:15 PM

[11p-D7-14] Compressive stress stimulated crystallization for amorphous Ge on insulator

〇Kazuki Kudo¹, Takatsugu Sakai¹, Kinta Kusano¹, Shinichi Motoyama², Yutaka Kusuda², Masahiro Furuta², Nobuyuki Naka³, Tomoko Numata³, Kenichiro Takakura¹, Isao Tsunoda¹ (1.KNCT, 2.SAMCO, 3.HORIBA)

Session information