[12a-A14-1~11] 3.9 Terahertz technologies

Thu. Mar 12, 2015 9:15 AM - 12:15 PM A14 (6A-103)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[12a-A14-1] Structural feature extraction of THz pulses by Time-frequency Analysis (3)

〇Norimasa Takahashi¹, Ryoichi Fukasawa¹, Tomofumi Ikari¹, Takahisa Oshima², Mizutani Yoshihiro² (1.Spectra Design Ltd., 2.Tokyo Tech.)

9:30 AM - 9:45 AM

△ [12a-A14-2] Experimental derivation of momentum relaxation time in terahertz range of graphen

〇(M1)Hiroyuki Wako¹, Akira Sako¹, Victor Ryzhii¹, Kenji Kawahara³, Hiroki Ago³, Junichiro Kono², Taiichi Otsuji¹ (1.RIEC, Tohoku Univ, 2.Rice Univ, 3.IMCE, Kyushu Univ)

9:45 AM - 10:00 AM

[12a-A14-3] Characterization of quantum interference parameter of phonon-electron system in p-GaInP

〇Hironori Sakamoto¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

10:00 AM - 10:15 AM

△ [12a-A14-4] Nonlinear Electrical Conductivity of Ultrathin Au films induced by Intense THz Pulses

〇Katsumasa Yoshioka¹, Yasuo Minami¹, Ken-ichi Shudo¹, Thang Duy Dao^2,^3,⁴, Tadaaki Nagao^2,³, Masahiro Kitajima^1,^2,^3,⁵, Jun Takeda¹, Ikufumi Katayama¹ (1.Yokohama National Univ., 2.WPI-MANA, NIMS, 3.CREST JST, 4.NAIST, 5.LxRay Co. Ltd.)

10:15 AM - 10:30 AM

[12a-A14-5] Photoinduced Extended Drude response observed with ultrabroadband infrared time-domain spectroscopy in InSb

〇Eiichi Matsubara^1,², Tomohide Morimoto², Masaya Nagai², Masaaki Ashida² (1.Osaka Dental Univ., 2.Osaka Univ.)

10:30 AM - 10:45 AM

[12a-A14-6] [Young Scientist Presentation Award Speech] Nonlinear behavior of antiferromagnetic resonance induced by intense terahertz magnetic near field of split ring resonator

〇Yu Mukai¹, Hideki Hirori^2,^3,⁴, Takafumi Yamamoto⁵, Hiroshi Kageyama^2,⁵, Koichiro Tanaka^1,^2,⁴ (1.Dept. Phys., Kyoto Univ., 2.iCeMS Kyoto Univ., 3.JST-PRESTO, 4.JST-CREST, 5.Dept. Eng., Kyoto Univ.)

Break (10:45 AM - 11:00 AM)

11:00 AM - 11:15 AM

[12a-A14-7] Plasma Instability in a Graphene Transistor with Asymmetric Dual-Grating-Gate Structure

〇Yuki Koseki¹, Victor Ryzhii¹, Taiichi Otsuji¹, Viacheslav Popov², Akira Satou¹ (1.RIEC, Tohoku Univ., 2.IREE, Russia)

11:15 AM - 11:30 AM

[12a-A14-8] Semiconductor material system for high-temperature THz-QCL operation

〇Hiroaki Yasuda¹ (1.NICT)

11:30 AM - 11:45 AM

[12a-A14-9] 1.86 THz Oscillator using Resonant Tunneling Diode with Reduction in Intrinsic Delay and Estimation of Frequency Increase by Reduction in Intrinsic and Extrinsic Delay

〇(D)Hidetoshi Kanaya¹, Takeru Maekawa¹, Safumi Suzuki², Masahiro Asada¹ (1.Tokyo Tech., 2.Tokyo Tech.)

11:45 AM - 12:00 PM

△ [12a-A14-10] A 580-900 GHz Wide Tuning Range by Integrated Multi Element Array of Voltage-Controlled Resonant-Tunneling-Diode Terahertz Oscillators

〇Seiichirou Kitagawa¹, Safumi Suzuki², Masahiro Asada¹ (1.Tokyo Tech., 2.Tokyo Tech.)

12:00 PM - 12:15 PM

[12a-A14-11] Radiation from negative-index materials

〇Dazhi Li¹, Keisuke Takano², Makoto Nakajima², Shuji Miyamoto³ (1.ILT, 2.ILE, 3.Hyogo Univ.)

Session information