Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

Thu. Mar 12, 2015 9:00 AM - 12:30 PM A21 (6A-213)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-A21-1] Conduction mechanism of gate leakage current in AlTiO/InAlN/AlN/GaN metal-insulator-semiconductor field-effect transistor

〇Jiqing Liang¹, Toshimasa Ui¹, Hong-An Shih¹, Shinya Yamaguchi¹, Toshi-kazu Suzuki¹ (1.JAIST)

9:15 AM - 9:30 AM

[12a-A21-2] Influence of gate metal electrode on leakage current for AlGaN/GaN HEMT

〇kazuki ohga¹, Takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech. FRC, 2.Tokyo Tech. IGSSE)

9:30 AM - 9:45 AM

△ [12a-A21-3] Mapping of degradation of AlGaN/GaN HEMTs using scanning internal photoemission microscopy

〇Shingo Yamamoto¹, Shinya Hatakeyama², Tetsuya Suemitsu², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Tohoku Univ.)

9:45 AM - 10:00 AM

[12a-A21-4] Mapping of crystalline of ion-implanted n-GaN Schottky contacts using scanning internal photoemission microscopy

〇Shingo Yamamoto¹, Shingo Murase¹, Takeshi Tanaka^1,², Tomoyoshi Mishima², Toru Nakamura³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hitachi Metal, 3.Hosei Univ.)

10:00 AM - 10:15 AM

△ [12a-A21-5] Characterization of n-GaN Schottky diodes on cleaved surfaces of free-standing substrates

〇Moe Naganawa¹, Toshichika Aoki¹, Takehiro Yoshida², Tomoyoshi Mishima^2,³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hitachi Metal, 3.Hosei Univ.)

10:15 AM - 10:30 AM

△ [12a-A21-6] Edge effect of anode electrode on forward characteristics of GaN schottky barrier diodes

〇daichi yoshikawa¹, yutarou yamaguchi², koji yamanaka², toshiyuki oishi¹ (1.Saga Univ., 2.Mitsubishi Electric.)

10:30 AM - 10:45 AM

△ [12a-A21-7] Analysis of parasitic resistance of GaN Schottky Barrier Diodes using three-terminal structure.

〇syuzo yamaguchi¹, yutaro yamaguchi², yamanaka kouzi², oishi toshiyuki¹ (1.Saga Univ., 2.Mitsubishi Electric)

Break (10:45 AM - 11:00 AM)

11:00 AM - 11:15 AM

[12a-A21-8] Electrical characteristics of N-polar p-type GaN Schottky contacts

〇Toshichika Aoki¹, Tomoyuki Tanikawa², Ryuji Katayama², Takashi Matsuoka², Kenji Shiojima¹ (1.Univ. of Fukui, 2.IMR, Tohoku Univ.)

11:15 AM - 11:30 AM

[12a-A21-9] Evaluation of 2DEG and polarization in AlGaN/GaN structure using scanning nonlinear dielectric microscopy

〇Kotaro Hirose¹, Norimichi Chinone¹, Yasuo Cho¹ (1.RIEC. Tohoku Univ.)

11:30 AM - 11:45 AM

[12a-A21-10] Activation of Implanted Si in GaN by Local Laser Annealing

〇(M1)Takaya Nagai¹, Akio Wakejima¹, Takashi Egawa¹, Tomoya Hirata², Satoshi Ando², Katsuhiko Tani² (1.Nagoya Inst. of Tech., 2.Y.A.C. Phoeton)

11:45 AM - 12:00 PM

△ [12a-A21-11] In situ Photoemission Study of Interface Reaction in Al/Ti/n-GaN Structures

〇Joyo Ito¹, Ryohei Asahara¹, Mikito Nozaki¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Akitaka Yoshigoe³, Yuden Teraoka³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic, 3.JAEA)

12:00 PM - 12:15 PM

[12a-A21-12] Reduction of contact resistance on AlGaN/GaN HEMT structures by introducing uneven AlGaN layers

〇Yusuke Takei¹, Shimoda Tomohiro¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol., 2.Toshiba)

12:15 PM - 12:30 PM

[12a-A21-13] Ohmic Contact Resistivity of δ-doped GaN Cap/AlGaN/GaN Heterostructure

〇(B)Naoki Kato¹, Akihiro Ando¹, Akio Wakejima¹, Takashi Egawa¹, Yamato Osada², Ryuichiro Kamimura² (1.Nagoya Inst. of Tech., 2.ULVAC)

Session information