Oral presentation
13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials
Thu. Mar 12, 2015 10:00 AM - 12:30 PM A27 (6A-202)
△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation
10:00 AM - 10:15 AM
〇Sohya Kudoh1, Nithi Atthi1, Shun-ichiro Ohmi1 (1.Tokyo Tech)
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10:15 AM - 10:30 AM
〇Satomi Tajima1, Toshio Hayashi1, Kenji Ishikawa1, Makoto Sekine1, Masaru Hori1 (1.Nagoya Univ.)
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10:30 AM - 10:45 AM
〇Shohei Takahashi1, Sadao Adachi1 (1.Gunma Univ.)
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10:45 AM - 11:00 AM
〇Yuji Amano1, 2, Daisuke Kobayashi2, Hiroshi Nohira1, Kazuyuki Hirose2 (1.Tokyo City Univ, 2.ISAS/JAXA)
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11:00 AM - 11:15 AM
〇MASATO NAKATSU1 (1.Mie Fujitsu Semiconductor)
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Break (11:15 AM - 11:30 AM)
11:30 AM - 11:45 AM
〇akira nakayama1, hiromichi yoshikawa1 (1.Kyocera)
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11:45 AM - 12:00 PM
〇Kazuya Matsuzawa1, Shogo Itai1, Mizuki Ono1, Takamitsu Ishihara1, Li Zhang1 (1.Corp. R&D, Toshiba)
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12:00 PM - 12:15 PM
〇JUN HIROTA1, MASAMUNE TAKANO1, SHIRO TAKENO1, HIROSHI AKAHORI1, NORIMICHI CHINONE2, YASUO CHO2 (1.Toshiba Semiconductor & Storage Products Company, 2.RIEC,Tohoku Univ)
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12:15 PM - 12:30 PM
〇Teruyuki Kinno1, Tadakatsu Ohkubo2, Mitsuhiro Tomita1, Kazuhiro Hono2 (1.Toshiba R&D Center, 2.NIMS)
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