[12a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

Thu. Mar 12, 2015 9:00 AM - 12:00 PM A29 (6A-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-A29-1] Calculation of Light Absorption Energy in Si Films during Blue Multi-Laser Diode Annealing

〇Tatsuya Okada¹, Seita Kamimura¹, Takashi Noguchi¹ (1.Univ. Ryukyus)

9:15 AM - 9:30 AM

[12a-A29-2] Lowering resistivity by BLDA for Si film without de-hydrogenation

〇Tomohide Wakasugi¹, Takuya Ashitomi¹, Tatsuya Okada¹, Takashi Noguchi¹, Osamu Nishikata², Atsushi Ota², Kazuhisa Inoue³, Kazuo Yamada³ (1.Ryukyus Univ., 2.ULVAC Inc., 3.Products-support Co. Ltd)

9:30 AM - 9:45 AM

[12a-A29-3] Dependence of Silicon Grain Growth by Micro-Thermal-Plasma-Jet Irradiation on Precursor Films

〇Shohei Hayashi^1,², Seiji Morisaki¹, Shogo Yamamoto¹, Taichi Nakatani¹, Ryota Shin¹, Seiichiro Higashi¹ (1.Grad. School of AdSM, Hiroshima Univ., 2.JSPS Research Fellow PD)

9:45 AM - 10:00 AM

[12a-A29-4] In-situ Observation of Grain Growth in a-Si patterns Crystallized by Atmospheric Micro-Thermal-Plasma-Jet

〇(D)Seiji Morisaki¹, Shohei Hayashi¹, Shogo Yamamoto¹, Taichi Nakatani¹, Takuya Kasahara¹, Seiichiro Higashi¹ (1.Grad. School of AdSM, Hiroshima Univ.)

10:00 AM - 10:15 AM

[12a-A29-5] Formation of orientation-controlled large-grain Ge-rich SiGe on insulator by gold-induced layer-exchange low-temperature crystallization (≤300°C)

〇Taizoh Sadoh¹, Jonghyeok Park^1,², Rikuta Aoki¹, Masanobu Miyao¹ (1.Kyushu Univ., 2.JSPS)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[12a-A29-6] I-V characteristics of amorphous C12A7 electride/crystalline Si contact

〇Toshinari Watanabe¹, Yasuhisa Oana², Yoshitake Toda³, Naomichi Miyakawa¹, Kaoru Furuta², Hideya Kumomi³, Hideo Hosono³ (1.ASAHI GLASS, 2.LG Display, 3.TITech)

10:45 AM - 11:00 AM

[12a-A29-7] Application of amorphous C12A7 electride to TFT electrodes

〇Yasuhisa Oana¹, Toshinari Watanabe², Toda Yoshitake³, Naomichi Miyakawa², Kaoru Furuta¹, Hideya Kumomi³, Hideo Hosono³ (1.LG Display, 2.Asahi Glass, 3.TITech)

11:00 AM - 11:15 AM

[12a-A29-8] Improved crystallinity of Si after BLDA toward multi-layer film structure photosensor

Kota Nakao¹, 〇(M2)Charith Jayanada Koswaththage¹, Tomohide Wakasugi¹, Tatsuya Okada¹, Takashi Noguchi¹ (1.Univ. of the Ryukyus)

11:15 AM - 11:30 AM

[12a-A29-9] Fabricating single-crystalline Silicon CMOS transistors on flexible substrate

〇Kohei Sakaike^1,², Akitoshi Nakagawa¹, Muneki Akazawa¹, Seiichiro Higashi^1,³ (1.Hiroshima Univ., 2.JSPS Research Fellow PD, 3.RNBS, Hiroshima Univ.)

11:30 AM - 11:45 AM

[12a-A29-10] Investigation of Relationship between Crystallization Speed and Off Current of TFT Fabricated by Atmospheric Pressure Micro-Thermal-Plasma-Jet Crystallized Germanium Film

〇Taichi Nakatani¹, Shohei Hayashi¹, Seiji Morisaki¹, Shogo Yamamoto¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

11:45 AM - 12:00 PM

[12a-A29-11] Fabrication and Demonstration of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC

〇Yoshiki Kamata¹, Masahiro Koike¹, Etsuo Kurosawa¹, Masashi Kurosawa^2,³, Hiroyuki Ota¹, Osamu Nakatsuka², Shigeaki Zaima², Tsutomu Tezuka¹ (1.GNC-AIST, 2.Nagoya Univ., 3.JSPS)

Session information