[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

Thu. Mar 12, 2015 9:00 AM - 11:45 AM B4 (6B-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-B4-1] Influence of Sn addition in SiCrAl solvent in 4H-SiC solution growth

〇Naoyoshi Komatsu¹, Takeshi Mitani^1,², Tetsuo Takahashi^1,², Tomohisa Kato^1,², Toru Ujihara³, Yuji Matsumoto⁴, Kazuhisa Kurashige^1,⁵, Hajime Okumura^1,² (1.FUPET, 2.AIST, 3.Nagoya Univ., 4.Tohoku Univ., 5.Hitachi Chemical Co., Ltd.)

9:15 AM - 9:30 AM

[12a-B4-2] Correlation between threading dislocation conversion during SiC solution growth and macrosteps on the growth surface

〇Shunta Harada¹, Shiyu Xiao¹, Kenta Aoyagi¹, Kenta Murayama¹, Takenobu Sakai¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ.)

9:30 AM - 9:45 AM

[12a-B4-3] Generation and suppression of interfacial dislocations in SiC epitaxial film growth using a horizontal CVD reactor

〇Chiaki Kudou^1,², Keiko Masumoto^1,⁵, Hirokuni Asamizu^1,³, Kentaro Tamura^1,³, Johji Nishio^1,⁴, Kazutoshi Kojima^1,⁵, Toshiyuki Ohno^1,⁶ (1.FUPET, 2.Panasonic, 3.ROHM, 4.Toshiba, 5.AIST, 6.Hitachi)

9:45 AM - 10:00 AM

[12a-B4-4] Periodic distance of surface nanostructures on 4H-SiC(0001) with various off-angles

〇Kouhei Fukuma¹, Tomoya Takasaki¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyushu University)

10:00 AM - 10:15 AM

[12a-B4-5] Crystal Quality of Free-Standing 3C-SiC (111) Substrates by Low Temperature Growth

〇Hidetoshi Asamura¹, Sumito Oouchi¹, Mitsuhisa Narukawa¹, Toru Inagaki¹, Keisuke Kawamura¹ (1.Air Water R & D)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

△ [12a-B4-6] SiC for water splitting with photocurrent of 12 mA/W

〇naoto ichikawa¹ (1.NIT)

10:45 AM - 11:00 AM

[12a-B4-7] Analysis of temperature dependence of surface recombination velocities for 4H-SiC

〇(B)Kimihiro Kohama¹, Yuto Mori¹, Masashi Kato¹, Masaya Ichimura¹ (1.NIT)

11:00 AM - 11:15 AM

△ [12a-B4-8] Temperature dependence of Hall effect in p-type 4H-SiC with various doping concentrations

〇Satoshi Asada¹, Takafumi Okuda¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

11:15 AM - 11:30 AM

[12a-B4-9] ESR study on hydrogen passivation of vacancy defects and formation of hydrogen complexes in 4H-SiC

〇Souki Tanai¹, Kouki Murakami¹, Takafumi Okuda², Jun Suda², Tsunenobu Kimoto², Ryouji Kosugi³, Takeshi Ohshima⁴, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST, 4.JAEA)

11:30 AM - 11:45 AM

△ [12a-B4-10] Analysis of gate bias dependent carrier distribution of cross-sectioned SiC-DMOSFET by ac biasing using super-higher-order SNDM

〇Norimichi Chinone¹, Cho Yasuo¹ (1.Tohoku Univ.)

Session information