Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[12a-C1-1~10] 6.2 Carbon-based thin films

Thu. Mar 12, 2015 9:00 AM - 11:45 AM C1 (6C-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [12a-C1-1] Formation and evaluation of SiO₂ gate dielectric films on diamond

〇(B)Takeshi Hara¹, Tomohiro Hakamata¹, Wako Ono¹, Yuji Seshimo¹, Yuya Hayashi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

9:15 AM - 9:30 AM

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al₂O₃Insulator

〇(B)Yuya KITABAYASHI¹, Tetsuya YAMADA¹, Dechen XU¹, Hidetoshi TSUBOI¹, Toshiki SAITO¹, Tatsuya SAITO¹, Daisuke MATSUMURA¹, Atsushi HIRAIWA¹, Hiroshi KAWARADA¹ (1.Waseda Univ.)

9:30 AM - 9:45 AM

△ [12a-C1-3] Comparison of high-temperature electric characteristics of ALD-Al₂O₃ MOS capacitors between different gate-electrode materials

〇Daisuke Matsumura¹, Tatsuya Saito¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

9:45 AM - 10:00 AM

△ [12a-C1-4] C-H diamond MOSFET with trench-channel

〇Toshiki Saito¹, Mikinori Kobayashi¹, Tetsuya Yamada¹, Dechen Xu¹, Yuya Kitabayashi¹, Daisuke Matsumura¹, Hidetoshi Tsuboi¹, Masafumi Inaba¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

10:00 AM - 10:15 AM

△ [12a-C1-5] Analysis of thin AlN on (001) diamond by X-ray in-plane diffraction

〇(B)Yuya Hayashi¹, Ono Wako¹, Hakamata tomohiro¹, Hiraiwa Atsushi¹, Kawarada Hiroshi¹ (1.Waseda Univ.)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

△ [12a-C1-6] Fabrication of Lateral p-n Junction at {1-10} Orientation on a (111) Substrate

〇Kazuki Sato¹, Takayuki Iwasaki^1,^2,³, Maki Shimizu^1,³, Hiromitsu Kato^3,⁴, Toshiharu Makino^3,⁴, Masahiko Ogura^3,⁴, Daisuke Takeuchi^3,⁴, Satoshi Yamasaki^3,⁴, Mutsuoko Hatano^1,^2,³ (1.TITECH, 2.ALCA, 3.CREST, 4.AIST)

10:45 AM - 11:00 AM

△ [12a-C1-7] Evaluation of potential profile of by Kelvin probe force microscopy and correlation with inside structures about a diamond lateral p-n junction

〇Kazuya Shirota^1,², Daisuke Takeuchi², Toshiharu Makino², Hiromitsu Kato², Masahiko Ogura², Satoshi Yamasaki^1,² (1.Tsukuba Univ., 2.AIST)

11:00 AM - 11:15 AM

[12a-C1-8] Normally-off Operation of Diamond JFET

〇Taisuke Suwa¹, Takayuki Iwasaki^1,^2,³, Kazuki Sato¹, Hiromitsu Kato^3,⁴, Toshiharu Makino^3,⁴, Masahiko Ogura^3,⁴, Daisuke Takeuchi^3,⁴, Satoshi Yamasaki^3,⁴, Mutsuko Hatano^1,^2,³ (1.Titech, 2.ALCA, 3.CREST, 4.AIST)

11:15 AM - 11:30 AM

[12a-C1-9] Electrical properties of diamond p⁺-i-n⁺ junction using hopping p⁺ and n⁺ layers

〇Toshiharu Makino^1,², Daisuke Kuwabara^1,^2,³, Hiromitsu Kato^1,², Daisuke Takeuchi^1,², Masahiko Ogura^1,², Hideyo Okushi^1,², Satoshi Yamasaki^1,^2,³ (1.ETRI, AIST, 2.CREST/JST, 3.Univ. of Tsukuba)

11:30 AM - 11:45 AM

△ [12a-C1-10] Temperature dependence of exciton emission in diamond light emitting diodes

〇(D)Daisuke Kuwabara^1,^2,³, Toshiharu Makino^2,³, Hiromitsu Kato^2,³, Daisuke Takeuchi^2,³, Masahiko Ogura^2,³, Hideyo Okushi^2,³, Satoshi Yamasaki^2,³ (1.Tsukuba Univ., 2.AIST, 3.CREST/JST)

Session information

[12a-C1-1~10] 6.2 Carbon-based thin films

△ [12a-C1-1] Formation and evaluation of SiO₂ gate dielectric films on diamond

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al₂O₃Insulator

△ [12a-C1-3] Comparison of high-temperature electric characteristics of ALD-Al₂O₃ MOS capacitors between different gate-electrode materials

△ [12a-C1-4] C-H diamond MOSFET with trench-channel

△ [12a-C1-5] Analysis of thin AlN on (001) diamond by X-ray in-plane diffraction

△ [12a-C1-6] Fabrication of Lateral p-n Junction at {1-10} Orientation on a (111) Substrate

△ [12a-C1-7] Evaluation of potential profile of by Kelvin probe force microscopy and correlation with inside structures about a diamond lateral p-n junction

[12a-C1-8] Normally-off Operation of Diamond JFET

[12a-C1-9] Electrical properties of diamond p⁺-i-n⁺ junction using hopping p⁺ and n⁺ layers

△ [12a-C1-10] Temperature dependence of exciton emission in diamond light emitting diodes

Authentication

Session information

[12a-C1-1~10] 6.2 Carbon-based thin films

△ [12a-C1-1] Formation and evaluation of SiO2 gate dielectric films on diamond

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al2O3 Insulator

△ [12a-C1-3] Comparison of high-temperature electric characteristics of ALD-Al2O3 MOS capacitors between different gate-electrode materials

△ [12a-C1-4] C-H diamond MOSFET with trench-channel

△ [12a-C1-5] Analysis of thin AlN on (001) diamond by X-ray in-plane diffraction

△ [12a-C1-6] Fabrication of Lateral p-n Junction at {1-10} Orientation on a (111) Substrate

△ [12a-C1-7] Evaluation of potential profile of by Kelvin probe force microscopy and correlation with inside structures about a diamond lateral p-n junction

[12a-C1-8] Normally-off Operation of Diamond JFET

[12a-C1-9] Electrical properties of diamond p+-i-n+ junction using hopping p+ and n+ layers

△ [12a-C1-10] Temperature dependence of exciton emission in diamond light emitting diodes

Authentication

△ [12a-C1-1] Formation and evaluation of SiO₂ gate dielectric films on diamond

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al₂O₃Insulator

△ [12a-C1-3] Comparison of high-temperature electric characteristics of ALD-Al₂O₃ MOS capacitors between different gate-electrode materials

[12a-C1-9] Electrical properties of diamond p⁺-i-n⁺ junction using hopping p⁺ and n⁺ layers