Oral presentation

Joint Session K » Joint Session K

[12a-D1-1~12] Joint Session K

Thu. Mar 12, 2015 9:00 AM - 12:15 PM D1 (16-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[12a-D1-1] ZnO films formed by high-speed rotation-type mist-CVD method

〇HIRONOBU TANOUE¹, Wada Shohei¹, Yokoyama Yutaro¹, Taniguchi Takuya¹, Yamamoto Shinya¹, Nakamura Shohei¹, Naka Yoshihiro^1,³, Nagaoka Shoji^2,³, Nakamura Yusui^1,³ (1.Kumamoto Univ., 2.Kumamoto Industrial Research Institute, 3.Phoenics)

9:15 AM - 9:30 AM

△ [12a-D1-2] Synthesis of nitrogen doped ZnO nanoparticles using radio frequency thermal plasma

〇(DC)Yuto Hiragino¹, Toshimi Tanaka², Hiroshi Takeuchi², Akira Takeuchi², Yasuhisa Fujita¹ (1.Shimane Univ., 2.Takeuchi Elec. Co.)

9:30 AM - 9:45 AM

△ [12a-D1-3] Annealing effect on N-doped ZnO films grown by MOCVD method

〇Takuya Nakaura^1,³, Yoshitomo Harada³, Jianyu Wang¹, Takahiro Nagata¹, Takashi Sekiguchi¹, Toyohiro Chikyo¹, Setsu Suzuki², Takamasa Ishigaki³, Masatomo Sumiya¹ (1.NIMS., 2.COMMET, 3.Hosei Univ.)

9:45 AM - 10:00 AM

[12a-D1-4] Effects of Oxygen-Gas-Flow Rates and Ga Contents on Structural Properties of Ga-Doped ZnO Films Prepared by Reactive Plasma Deposition with a DC Arc Discharge

〇Tomoaki Terasako¹, Junichi Nomoto², Hisao Makino², Sho Shirakata¹, Tetsuya Yamamoto² (1.Grad. School Sci. & Eng., Ehime Univ., 2.Research Inst., Kochi Univ. Technol.)

10:00 AM - 10:15 AM

[12a-D1-5] Dependence of crystallinity on deposition temperature in V-doped ZnO ultrathin films grown on c-sapphire substrate

〇Akihiro Watanabe¹, Hiroshi Chiba², Tomoyuki Kawashima^1,², Katsuyoshi Washio^1,² (1.Tohoku Univ., 2.Tohoku Univ., Grad. Sch. Eng.)

10:15 AM - 10:30 AM

[12a-D1-6] Dependence of crystallinity on growth temperature in V-doped ZnO thin films on c-face and a-face sapphire substrates

〇Hiroshi Chiba¹, Akihiro Watanabe², Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Grad. Schl. of Eng., Tohoku Univ., 2.Tohoku Univ.)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[12a-D1-7] Air annealing treatment of ZnO layer grown by UHV sputtering

〇(M1)Kenji Matsuhisa¹, Hiroki Sakuma¹, Yuya Miyoshi¹, Ai Mizuno¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

11:00 AM - 11:15 AM

[12a-D1-8] Fabrication of ZnO films on c-plane sapphire substrate via nitrogen mediated crystallization: effects of grain density of buffer layers

Tomoaki Ide¹, Koichi Matsushima¹, Ryota Shimizu¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, 〇Naho Itagaki^1,² (1.Kyushu University, 2.JST PREST)

11:15 AM - 11:30 AM

△ [12a-D1-9] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (3): about shallow impurities

〇Yoshiki Yamazaki¹, Kentaro Furusawa¹, Sakuya Iwahashi¹, Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

11:30 AM - 11:45 AM

△ [12a-D1-10] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (4) : about transition metal impurities

〇(B)Sakuya Iwahashi¹, Yoshiki Yamazaki¹, Kazunobu Kojima¹, Kentaro Furusawa¹, Akira Uedono², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Univ. Tsukuba)

11:45 AM - 12:00 PM

△ [12a-D1-11] Calibration and Control of In-plane Mg Doping Distribution in Mg_xZn_1−xO/ZnO Heterostructures

〇Masaki Uchida¹, Joseph Falson¹, Yusaburo Segawa², Yusuke Kozuka¹, Atsushi Tsukazaki^3,⁴, Masashi Kawasaki^1,² (1.Dept. of Appl. Phys., the Univ. of Tokyo, 2.CEMS, RIKEN, 3.IMR, Tohoku Univ., 4.JST-PRESTO)

12:00 PM - 12:15 PM

[12a-D1-12] Spectral responsivity of a Pt/ Mg_xZn_1-xO/n⁺-ZnO Schottky photodiode

〇Haruyuki Endo¹, Hideyuki Sato², Mohamed Belmoubarik², Kyo Takahashi¹, Tomohiro Nozaki², Masashi Sahashi², Yasube Kashiwaba³ (1.Iwate Ind. Res. Inst., 2.Tohoku Univ., 3.Iwate Univ.)

Session information

[12a-D1-1~12] Joint Session K

[12a-D1-1] ZnO films formed by high-speed rotation-type mist-CVD method

△ [12a-D1-2] Synthesis of nitrogen doped ZnO nanoparticles using radio frequency thermal plasma

△ [12a-D1-3] Annealing effect on N-doped ZnO films grown by MOCVD method

[12a-D1-4] Effects of Oxygen-Gas-Flow Rates and Ga Contents on Structural Properties of Ga-Doped ZnO Films Prepared by Reactive Plasma Deposition with a DC Arc Discharge

[12a-D1-5] Dependence of crystallinity on deposition temperature in V-doped ZnO ultrathin films grown on c-sapphire substrate

[12a-D1-6] Dependence of crystallinity on growth temperature in V-doped ZnO thin films on c-face and a-face sapphire substrates

[12a-D1-7] Air annealing treatment of ZnO layer grown by UHV sputtering

[12a-D1-8] Fabrication of ZnO films on c-plane sapphire substrate via nitrogen mediated crystallization: effects of grain density of buffer layers

△ [12a-D1-9] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (3): about shallow impurities

△ [12a-D1-10] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (4) : about transition metal impurities

△ [12a-D1-11] Calibration and Control of In-plane Mg Doping Distribution in Mg_xZn_1−xO/ZnO Heterostructures

[12a-D1-12] Spectral responsivity of a Pt/ Mg_xZn_1-xO/n⁺-ZnO Schottky photodiode

Authentication

Session information

[12a-D1-1~12] Joint Session K

[12a-D1-1] ZnO films formed by high-speed rotation-type mist-CVD method

△ [12a-D1-2] Synthesis of nitrogen doped ZnO nanoparticles using radio frequency thermal plasma

△ [12a-D1-3] Annealing effect on N-doped ZnO films grown by MOCVD method

[12a-D1-4] Effects of Oxygen-Gas-Flow Rates and Ga Contents on Structural Properties of Ga-Doped ZnO Films Prepared by Reactive Plasma Deposition with a DC Arc Discharge

[12a-D1-5] Dependence of crystallinity on deposition temperature in V-doped ZnO ultrathin films grown on c-sapphire substrate

[12a-D1-6] Dependence of crystallinity on growth temperature in V-doped ZnO thin films on c-face and a-face sapphire substrates

[12a-D1-7] Air annealing treatment of ZnO layer grown by UHV sputtering

[12a-D1-8] Fabrication of ZnO films on c-plane sapphire substrate via nitrogen mediated crystallization: effects of grain density of buffer layers

△ [12a-D1-9] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (3): about shallow impurities

△ [12a-D1-10] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO films using the hydrothermal ZnO target (4) : about transition metal impurities

△ [12a-D1-11] Calibration and Control of In-plane Mg Doping Distribution in MgxZn1−xO/ZnO Heterostructures

[12a-D1-12] Spectral responsivity of a Pt/ MgxZn1-xO/n+-ZnO Schottky photodiode

Authentication

△ [12a-D1-11] Calibration and Control of In-plane Mg Doping Distribution in Mg_xZn_1−xO/ZnO Heterostructures

[12a-D1-12] Spectral responsivity of a Pt/ Mg_xZn_1-xO/n⁺-ZnO Schottky photodiode