Oral presentation

3 Optics and Photonics » 3.15 Silicon photonics

[12p-A16-1~13] 3.15 Silicon photonics

Thu. Mar 12, 2015 2:00 PM - 5:30 PM A16 (6A-206)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

2:00 PM - 2:15 PM

[12p-A16-1] Ge/SiGe Heterojunction Avalanche Photodiodes

〇(B)Yuji Miyasaka¹, Yasuhiko Ishikawa¹, Tatsurou Hiraki^2,³, Kota Okazaki^2,³, Kotaro Takeda^2,³, Tai Tsuchizawa^2,³, Koji Yamada^2,³, Kazumi Wada¹ (1.Univ. Tokyo, 2.NTT Device Technology Labs, 3.NTT Nanophotonics Center)

2:15 PM - 2:30 PM

[12p-A16-2] Enhancement of biaxial tensile strain of Ge layer grown on SOI substrate by using residual strain and microstructures

〇Satomi Ishida¹, Satoshi Kako^1,², Kastuya Oda³, Tatemi Ido³, Satoshi Iwamoto^1,², Yasuhiko Arakawa^1,² (1.IIS/RCAST, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo, 3.HITACHI)

2:30 PM - 2:45 PM

△ [12p-A16-3] Enhanced Light Emission from Tensile-Strained Ge on Si by Thermal Oxidation

〇(M2)Koki Takabayashi¹, Xuejun Xu¹, Kentarou Sawano¹, Takuya Maruizumi¹ (1.Tokyo City Univ.)

2:45 PM - 3:00 PM

[12p-A16-4] Circular-polarized indirect-gap luminescence from tensile-strained Ge

〇Tomoaki Matsushita¹, Yuhsuke Yasutake^1,², Satoshi Iba³, Hidekazu Saito³, Shinji Yuasa³, Susumu Fukatsu¹ (1.Univ. of Tokyo, 2.JST-PRESTO, 3.AIST)

3:00 PM - 3:15 PM

[12p-A16-5] Effect of excitation power density on micro-photoluminescence for Ge

〇(B)Naoki Higashitarumizu¹, Yasuhiko Ishikawa¹ (1.Univ. of Tokyo)

3:15 PM - 3:30 PM

▲ [12p-A16-6] Study of Thermal Annealing Effect on Smartcut Ge-on-Insulator Substrate

〇Jian Kang^1,², Xiao Yu^1,², Mitsuru Takenaka^1,², Shinichi Takagi^1,² (1.Tokyo Univ., 2.JST-CREST)

3:30 PM - 3:45 PM

[12p-A16-7] Fabrication and optical characterization of micordisk cavities using directly grown Ge on SOI

〇Satoshi Kako^1,², Satomi Ishida¹, Katsuya Oda³, Shinichi Saito⁴, Tatemi Ido³, Yasuhiko Arakawa^1,² (1.IIS/RCAST. Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo, 3.HITACHI, 4.Univ. Southampton)

3:45 PM - 4:00 PM

[12p-A16-8] Fabrication of chemically-modified germanene on Si(111)

〇Yuhsuke Yasutake^1,², Susumu Fukatsu¹ (1.UTokyo, 2.JST-PRESTO)

Break (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

▲ [12p-A16-9] Ridge-Type InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Bonding

〇(D)YuanHsuan Jhang¹, Katsuaki Tanabe², Satoshi Iwamoto^1,², Yasuhiko Arakawa^1,² (1.IIS, Univ. Tokyo, 2.NanoQuine, Univ. Tokyo)

4:30 PM - 4:45 PM

[12p-A16-10] Integration of InP-based buried heterostructure on Si-wire

〇Takuro Fujii^1,², Koji Takeda^1,², Hidetaka Nishi^1,², Koichi Hasebe^1,², Takaaki Kakitsuka^1,², Tsuyoshi Yamamoto¹, Koji Yamada^1,², Shinji Matsuo^1,² (1.NTT Device Technology Labs., 2.Nanophotonics Center)

4:45 PM - 5:00 PM

[12p-A16-11] Integration of highly unidirectional microring III-V laser with in-cavity feedback silicon waveguide and photodetector on SOI substrate (I)

〇Norio Iizuka¹, Kazuya Ohira¹, Hirotaka Uemura¹, Haruhiko Yoshida¹, Mizunori Ezaki¹, Hiroshi Uemura¹, Yoichiro Kurita¹, Hideto Furuyama¹ (1.PETRA)

5:00 PM - 5:15 PM

[12p-A16-12] Integration of highly unidirectional microring III-V laser with in-cavity feedback silicon waveguide, and photodetector with on SOI substrate (II)

〇Haruhiko Yoshida¹, Kazuya Ohira¹, Hirotaka Uemura¹, Norio Iizuka¹, Mizunori Ezaki¹, Hiroshi Uemura¹, Yoichiro Kurita¹, Hideto Furuyama¹ (1.PETRA)

5:15 PM - 5:30 PM

[12p-A16-13] Silicon Photonic Wavelength Tunable Laser Diode for 1.2 mm Wavelength Range Using InAs Quantum Dot Optical Amplifier

〇Tomohiro Kita¹, Naokatsu Yamamoto², Tetsuya Kawanishi², Hirohito Yamada¹ (1.Tohoku Univ., 2.NICT)

Session information