Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[12p-A17-1~19] 3.13 Semiconductor optical devices

Thu. Mar 12, 2015 2:00 PM - 7:00 PM A17 (6A-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[12p-A17-1] [Young Scientist Presentation Award Speech] Fabrication and Experimental Demonstration of InP Monolithic Polarization Modulator Using Half-Ridge Waveguide Structure

〇Yuto Kawabata¹, Masaru Zaitsu¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (1.Univ. of Tokyo)

2:15 PM - 2:30 PM

△ [12p-A17-2] Optical interconnection between III-V chips on Si by using photonic wire bonding

〇(M2)ZhiChen Gu¹, Tomohiro Amemiya^2,³, Atsushi Ishikawa³, Yuki Atsumi⁴, JoonHyun Kang¹, Takuo Hiratani¹, Nobuhiko Nishiyama¹, Takuo Tanaka³, Shigehisa Arai^1,² (1.Tokyo Tech, 2.QNERC, 3.RIKEN, 4.AIST)

2:30 PM - 2:45 PM

[12p-A17-3] Spot-size converter integrated quantum dot laser diodes on GaAs substrate.

〇Ayahito Uetake¹, Kazumasa Takabayashi¹, Tokuharu Kimura¹, Tsuyoshi Yamamoto¹, Masaomi Yamaguchi², Kan Takada², Keizo Takemasa², Mitsuru Sugawara², Yasuhiko Arakawa³ (1.Fujitsu Labs., 2.QD laser, 3.INQIE, Univ. of Tokyo)

2:45 PM - 3:00 PM

[12p-A17-4] Optical properties of InAs QD laser diode for Near-infrared broadband light source[2]

〇Yoshinori Sawado¹, Yoshizawa Katsumi¹, Kouichi Akahane², Naokatsu Yamamoto² (1.PioneerMTC, 2.NICT)

3:00 PM - 3:15 PM

[12p-A17-5] Development of broadband QD ridge-waveguide laser diode in 1.1μm

〇Katsumi Yoshizawa¹, Yoshinori Sawado¹, Akahane Kouichi², Yamamoto Naokatsu² (1.Pioneer MTC, 2.NICT)

3:15 PM - 3:30 PM

[12p-A17-6] Current injection characteristics of modulation doped InAs/InP double capped quantum dots structure

〇(M1)Toshiki Sukigara¹, Yuta Yamamoto¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

3:30 PM - 3:45 PM

[12p-A17-7] Surface corrugation and optical properties of InGaAs layers grown on (775) B InP substrate by Molecular Beam Epitaxy and their indium composition dependence

〇Teruyoshi Matsuda¹, Satoshi Shimomura¹, Shun Morisada¹ (1.Ehime Univ.)

3:45 PM - 4:00 PM

[12p-A17-8] Fabrication of Two-Color Surface Emitting Laser in a QD Coupled Cavity Formed by Wafer-Bonding

Chiho Harayama¹, 〇Hiroto Ota¹, Tomohisa Maekawa¹, Xiangmeng Lu¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (1.Univ. of Tokushima)

4:00 PM - 4:15 PM

[12p-A17-9] Analysis of the quantum levels of InAs/InGaAsP strained quantum dots

〇Moeka Yamaguchi¹, Nobuko Arai¹, Yume Ide¹, Hajime Imai¹ (1.Japan Woman's Univ.)

Break (4:15 PM - 4:30 PM)

4:30 PM - 4:45 PM

△ [12p-A17-10] Room-temperature continuous-wave operation of semiconductor membrane distributed-reflector laser with butt-joint built-in structure

〇Takuo Hiratani¹, Daisuke Inoue¹, Takahiro Tomiyasu¹, Yuki Atsuji¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,² (1.Tokyo Tech, 2.QNERC)

4:45 PM - 5:00 PM

△ [12p-A17-11] Low voltage operation of GaInAsP/InP Membrane Laser

〇Yuki Atsuji¹, Kai Fukuda¹, Takumi Hiratani¹, Daisuke Inoue¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,² (1.Tokyo Tech., 2.QNERC)

5:00 PM - 5:15 PM

[12p-A17-12] Current-injected operation of GaInAs/InP MQW LED fabricated on wafer-bonded InP/Quartz substrate

〇Keiichi Matsumoto¹, Makoto Takasu¹, Yoshinori Kanaya¹, Junya Kishikawa¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

5:15 PM - 5:30 PM

[12p-A17-13] Bonding interface characteristics of directly-bonded InP/Si substrate

〇(M1)Junya Kishikawa¹, Keiichi Matsumoto¹, Yoshinori Kanaya¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

5:30 PM - 5:45 PM

△ [12p-A17-14] Photoluminescence in GeSn-on-quartz structures fabricated by rapid thermal annealing

〇(M1)takashi amamoto¹, kouhei tominaga¹, keiko kajimura¹, takuji hosoi¹, takayoshi shimura¹, heiji watanabe¹ (1.Osaka Univ.)

5:45 PM - 6:00 PM

[12p-A17-15] Investigation of quantum well intermixing on III-V-OI wafer

〇Seiya Takashima^1,², Yuki Ikku^1,², Mitsuru Takenaka^1,², Shin-ichi Takagi^1,² (1.The Univ. of Tokyo, 2.JST-CREST)

6:00 PM - 6:15 PM

[12p-A17-16] Guided Light Propagation Loss Reduction Using GaAsP Strained Quantum Well Selective Area Disordering by F Ion Implantation and Thermal Annealing

Shinya Okuda¹, 〇Masahiro Uemukai¹, Toshiaki Suhara¹ (1.Osaka Univ.)

6:15 PM - 6:30 PM

[12p-A17-17] Proposal and Analysis of Resonance-Shifted DFB-LD for High Efficiency Operation

〇(M1)Keiichiro Ichikawa¹ (1.Ritsumeikan Univ.)

6:30 PM - 6:45 PM

[12p-A17-18] Experiments on high-speed switching of helicity in circular polarization with spin-LED

〇Masaki Aoyama¹, Nozomi Nishizawa¹, Kazuhiro Nishibayashi¹, Hiro Munekata¹ (1.Imaging Sci. & Eng. Lab., Tokyo Inst. of Tech.)

6:45 PM - 7:00 PM

[12p-A17-19] Light Extraction Enhancement of 265nm Deep-Ultraviolet LEDs with High Power DC Operation at over 90 mW

〇Shin-ichiro Inoue¹, Naoki Tamari^1,², Manabu Taniguchi¹, Kousei Nakaya¹, Toru Kinoshita², Toshiyuki Obata², Hiroyuki Yanagi² (1.NICT, 2.Tokuyama Co.)

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