Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[12p-A18-1~18] 15.8 Crystal evaluation, impurities and crystal defects

Thu. Mar 12, 2015 2:00 PM - 7:00 PM A18 (6A-208)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

▲ [12p-A18-1] Formation of polycrystalline Silicon Layer on Quartz substrate by Aluminium-induced Crystallization

〇(M1)Joko Suwardy^1,², Wipakorn Jevasuwan¹, Kaoru Toko², Takashi Suemasu², Naoki Fukata^1,² (1.National Institute for Materials Science, 2.Univ. of Tsukuba)

2:15 PM - 2:30 PM

△ [12p-A18-2] Systematic Change of Photoluminescence Spectra in Highly Doped Si

〇Kei Nakagawa^1,², Michio Tajima^1,², Hiroyuki Toyota², Atsushi Ogura¹ (1.Meiji Univ., 2.ISAS/JAXA)

2:30 PM - 2:45 PM

[12p-A18-3] Infrared absorption measurement of low concentration carbon in Si crystal (VI) SIMS measurement and preparation of standard samples down to 5x10¹⁴ cm⁻³

〇Naohisa Inoue^1,⁷, Kaori Watanabe², Yasunori Gotou³, Masumi Obuchi⁴, Hirofumi Seki⁵, Hiroyuki Uno⁶, Yuichi Kawamura⁷ (1.Tokyo Univ. Agri. & Technol., 2.Systems Eng. Inc., 3.Toyota Motor Co., 4.Nano Science Co., 5.Toray Res. C. Inc., 6.S. H. I. Exam. & Inspec., 7.Osaka Pref. Unic.)

2:45 PM - 3:00 PM

[12p-A18-4] Infrared absorption of silicon carbide crystals (3) reflection mode

〇Naohisa Inoue¹, Kaori Watanabe², Akinori Seki³, Yuichi Kawamura⁴ (1.Tokyo Univ. Agri. & Technol., 2.Systems Eng. Inc., 3.Toyota Motor Co., 4.Osaka Pref. Univ.)

3:00 PM - 3:15 PM

[12p-A18-5] Growth of Czochralski Silicon Crystals with Ultralow Carbon Concentration by Evaporating Carbon Impurities from Silicon Melt

〇Yuta Nagai¹, Kazuhiko Kashima¹, Satoko Nakagawa¹, Mitsuo Higasa¹ (1.GlobalWafers Japan)

3:15 PM - 3:30 PM

[12p-A18-6] Effect of Low Carbon Concentration on Bulk Carrier Lifetime in MCZ Silicon Crystal (2)

〇Mitsuo Higasa¹, Satoko Nakagawa¹, Kazuhiko Kashima¹, Yuta Nagai¹ (1.GlobalWafers Japan)

Break (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[12p-A18-7] Effect of thermal stress on critical v/G value in growing single crystal Si (II)

〇Kouji Sueoka¹, Eiji Kamiyama¹, Kozo Nakamura¹ (1.Okayama Pref. Univ.)

4:00 PM - 4:15 PM

[12p-A18-8] Properties of point defects in Si crystals determined from studies of self-diffusion and grown-in defects

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Naoki Fukata², Ichiro Yonenaga¹ (1.Tohoku Univ., 2.NIMS)

4:15 PM - 4:30 PM

[12p-A18-9] Study of impurity effect on the vacancy concentration in Si crystal (II)

〇Kozo Nakamura¹, Koji Sueoka¹, Eiji Kamiyama¹ (1.Okayama Pref. Univ.)

4:30 PM - 4:45 PM

△ [12p-A18-10] The temperature dependency of Hydrogen-related donor and interstitial Silicon cluster formation in FZ-Silicon irradiated with MeV Proton

〇AKIRA KIYOI¹, MASAYUKI TANAKA¹, TSUYOSHI KAWAKAMI¹, HIROZO TSURUTA¹, JYUNJI TANIMURA¹, TADAHARU MINATO², TARUTANI MASAYOSHI² (1.Mitsubishi Electric Co. Advanced Technology R&D Lab, 2.Mitsubishi Electric Co. Power Device Works)

4:45 PM - 5:00 PM

△ [12p-A18-11] Critical stress for generation of slip dislocation developing around oxide precipitates in silicon wafers

〇JUN FUJISE¹, BONGGYUN KO¹, KAZUHISA TORIGOE¹, TOSHIAKI ONO¹ (1.SUMCO Corp.)

5:00 PM - 5:15 PM

△ [12p-A18-12] Low Temperature Annealing Behavior of Iron-Related Deep Levels in n-type Silicon Wafer

〇Ayumi Onaka¹, Takeshi Kadono¹, Noritomo Mitsugi¹, Kazunari Kurita¹ (1.SUMCO)

Break (5:15 PM - 5:30 PM)

5:30 PM - 5:45 PM

[12p-A18-13] Proximity Gettering of Carbon Cluster Ion Irradiation Silicon Wafers - Gettering Effect on Device Characteristic for CMOS imager -

〇Kazunari Kurita¹, Takeshi Kadono¹, Gon-sub Lee², Jea-Gun Park² (1.SUMCO CORPORATION, 2.Hanyang University)

5:45 PM - 6:00 PM

△ [12p-A18-14] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers(2) -Hydrogen Diffusion Behavior After Epitaxial Growth-

〇Ryosuke Okuyama¹, Ryo Hirose¹, Takeshi Kadono¹, Takuro Iwanaga¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO Corp.)

6:00 PM - 6:15 PM

[12p-A18-15] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers - Oxygen Diffusion Behavior after Epitaxial Growth -

〇HIDEHIKO OKUDA¹, RYOSUKE OKUYAMA¹, TAKUROU IWANAGA¹, TAKESHI KADONO¹, RYO HIROSE¹, YOSHIHIRO KOGA¹, KAZUNARI KURITA¹ (1.SUMCO CORP.)

6:15 PM - 6:30 PM

△ [12p-A18-16] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers (4) - Effects of Cold Cluster Irradiation on Defects Formation -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Takuro Iwanaga¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORP.)

6:30 PM - 6:45 PM

[12p-A18-17] Effective gettering sites for metals in Si wafer searched by first principles calculation

〇Sho Shirasawa¹, Koji Sueoka¹, Kazuyoshi Maekawa², Tadashi Yamaguchi² (1.Okayama Pref. Univ., 2.Renesas Electronics)

6:45 PM - 7:00 PM

[12p-A18-18] A program for atomic configuration considering space symmetry in IV semiconductors

〇Kouji Sueoka¹, Ryo Matsutani¹, Sho Shirasawa¹, Eiji Kamiyama^1,², Koji Izunome², Kazuhiko Kashima², Osamu Nakatsuka³ (1.Okayama Pref. Univ., 2.Globalwafers, 3.Nagoya Univ.)

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