[12p-A23-1~11] 13.5 Semiconductor devices and related techologies

Thu. Mar 12, 2015 2:00 PM - 5:30 PM A23 (6A-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:45 PM

[12p-A23-1] [Outstanding Achievement Award] Contribution on the evolution of high-density memory and pioneering reseach of three-dimensional integrated circuits

〇Mitsumasa Koyanagi¹ (1.Tohoku Univ.)

2:45 PM - 3:00 PM

[12p-A23-2] Channel Shape Dependent of Electrical Characteristics of Floating-Gate Type 3D FinFET Flash Memories

〇Yongxun Liu¹, Toshihide Nabatame², Takashi Matsukawa¹, Kazuhiko Endo¹, Shinichi O'uchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Wataru Mizubayashi¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Toyohiro Chikyow², Meishoku Masahara¹ (1.AIST, 2.NIMS)

3:00 PM - 3:15 PM

△ [12p-A23-3] Substrate Doping Concentration Dependence on Spatial and Statistical Distribution of Rndom Telegraph Noise in 30nm NAND flash memory

〇(M1)toshihiro tomita¹, miyaji kousuke¹ (1.Shinshu Univ.)

3:15 PM - 3:30 PM

[12p-A23-4] Research on the Performance of the Storage-Class Memory/NAND Flash Memory Hybrid SSD Considering Reliability

〇Hirofumi Takishita¹, Shuhei Tanakamaru^1,², Shogo Hosaka¹, Koh Johguchi¹, Ken Takeuchi¹ (1.Chuo Univ., 2.Univ. of Tokyo.)

3:30 PM - 3:45 PM

[12p-A23-5] Highly reliable method of SSD for long term storage

〇Senju Yamazaki¹, Shuhei Tanakamaru^1,², Yuta Kitamura¹, Ken Takeuchi¹ (1.Chuo. Univ., 2.Univ. Tokyo)

3:45 PM - 4:00 PM

[12p-A23-6] Highly reliable method for enterprise solid-state-drives

〇Senju Yamazaki¹, Shuhei Tanakamaru^1,², Ken Takeuchi¹ (1.Chuo Univ., 2.Univ. Tokyo)

Break (4:00 PM - 4:15 PM)

4:15 PM - 4:30 PM

[12p-A23-7] Fast Read and Highly Reliable LDPC for TLC NAND Flash Memory

〇Tsukasa Tokutomi¹, Masafumi Doi¹, Shogo Hachiya¹, Shuhei Tanakamaru¹, Ken Takeuchi¹ (1.Chuo Univ.)

4:30 PM - 4:45 PM

[12p-A23-8] Dynamic V_TH Optimization and Auto Data Recovery for High Reliable TLC Flash Based Solid-State Drives (SSDs)

〇Atsuro Kobayashi¹, Tsukasa Tokutomi¹, Masafumi Doi¹, Shogo Hachiya¹, Shuhei Tanakamaru¹, Ken Takeuchi¹ (1.Chuo Univ.)

4:45 PM - 5:00 PM

▲ [12p-A23-9] Measurements and Statistical Comparison of Four Write Stability Metrics in Bulk CMOS SRAM Cells

〇(D)Hao Qiu¹, Tomoko Mizutani¹, Takuya Saraya¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

5:00 PM - 5:15 PM

▼ [12p-A23-10] Statistical Analysis of Four Write Stability Metrics in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Low Supply Voltage Down to 0.4V

〇(D)Hao Qiu¹, Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.LEAP)

5:15 PM - 5:30 PM

[12p-A23-11] Detailed Analysis of Minimum Operation Voltage (V_min) of Extraordinarily Unstable Cells in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM

〇Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.LEAP)

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