Oral presentation

13 Semiconductors » 13.7 Quantum properties and fabrications of nanoscale structures and devices

[12p-A24-1~7] 13.7 Quantum properties and fabrications of nanoscale structures and devices

Thu. Mar 12, 2015 2:00 PM - 3:45 PM A24 (6A-217)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[12p-A24-1] Pump-energy dependence of exciton quantum beat in semiconductor quantum wells

〇Osamu Kojima¹, Takashi Kita¹ (1.Kobe Univ.)

2:15 PM - 2:30 PM

[12p-A24-2] Evaluation of Hole-Spin Superposition in GaAs Quantum Well through Linearly Polarization Resolved Pump and Probe Measurements

〇Tetsu Ito^1,², Hideki Gotoh³, Soichiro Fuma¹, Masao Ichida⁴, Hiroaki Ando⁴ (1.RIE Shizuoka Univ., 2.Grad. Sch. of Eng. Shizuoka Univ., 3.NTT BRL, 4.Fac. of Sci. & Eng. Konan Univ.)

2:30 PM - 2:45 PM

△ [12p-A24-3] Temperature and barrier thickness dependence of GaAs/AlGaAs tunneling bi-quantum-well

〇Takanori Aritake¹, Ryo Harasawa¹, Yuya Yasue¹, Hao Wu¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ.)

2:45 PM - 3:00 PM

[12p-A24-4] Control of ultrafast optical responses using a carrier transport in GaAs epitaxial structures

〇Takayuki Hasegawa¹, Hideo Takeuchi², Hisashi Yamada³, Masahiko Hata³, Masaaki Nakayama² (1.Univ. Hyogo, 2.Osaka City Univ., 3.Sumitomo Chemical)

3:00 PM - 3:15 PM

[12p-A24-5] Crystalline Germanium Quantum Well Formed in Hydrogenated Amorphous Silicon

〇Hikaru Kaitsu¹, Masao Isomura¹ (1.Tokai Univ.)

3:15 PM - 3:30 PM

[12p-A24-6] Analysis of resistance switching characteristics of resonant-tunneling quantum-well structures using CaF₂/CdF₂/CaF₂ heterostructure

〇(DC)KEITA SUDA¹, Yuya Kuwata¹, Masahiro Watanabe¹ (1.Tokyo Inst. Tech.)

3:30 PM - 3:45 PM

[12p-A24-7] First-principles calculation of segregation-induced Schottky-barrier modulation at metal/Ge interfaces

〇Yukiko Onda¹, Takashi Nakayama¹ (1.Chiba Univ.)

Session information

[12p-A24-1~7] 13.7 Quantum properties and fabrications of nanoscale structures and devices

[12p-A24-1] Pump-energy dependence of exciton quantum beat in semiconductor quantum wells

[12p-A24-2] Evaluation of Hole-Spin Superposition in GaAs Quantum Well through Linearly Polarization Resolved Pump and Probe Measurements

△ [12p-A24-3] Temperature and barrier thickness dependence of GaAs/AlGaAs tunneling bi-quantum-well

[12p-A24-4] Control of ultrafast optical responses using a carrier transport in GaAs epitaxial structures

[12p-A24-5] Crystalline Germanium Quantum Well Formed in Hydrogenated Amorphous Silicon

[12p-A24-6] Analysis of resistance switching characteristics of resonant-tunneling quantum-well structures using CaF₂/CdF₂/CaF₂ heterostructure

[12p-A24-7] First-principles calculation of segregation-induced Schottky-barrier modulation at metal/Ge interfaces

Authentication

Session information

[12p-A24-1~7] 13.7 Quantum properties and fabrications of nanoscale structures and devices

[12p-A24-1] Pump-energy dependence of exciton quantum beat in semiconductor quantum wells

[12p-A24-2] Evaluation of Hole-Spin Superposition in GaAs Quantum Well through Linearly Polarization Resolved Pump and Probe Measurements

△ [12p-A24-3] Temperature and barrier thickness dependence of GaAs/AlGaAs tunneling bi-quantum-well

[12p-A24-4] Control of ultrafast optical responses using a carrier transport in GaAs epitaxial structures

[12p-A24-5] Crystalline Germanium Quantum Well Formed in Hydrogenated Amorphous Silicon

[12p-A24-6] Analysis of resistance switching characteristics of resonant-tunneling quantum-well structures using CaF2/CdF2/CaF2 heterostructure

[12p-A24-7] First-principles calculation of segregation-induced Schottky-barrier modulation at metal/Ge interfaces

Authentication

[12p-A24-6] Analysis of resistance switching characteristics of resonant-tunneling quantum-well structures using CaF₂/CdF₂/CaF₂ heterostructure