Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[12p-A27-1~15] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Thu. Mar 12, 2015 2:00 PM - 6:00 PM A27 (6A-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[12p-A27-1] [Young Scientist Presentation Award Speech] Atomistic Origin of Thermal Conductivity Reduction in Si Nanowire Covered with SiO₂ Film

〇Tomofumi Zushi^1,³, Kenji Ohmori², Keisaku Yamada², Takanobu Watanabe¹ (1.Waseda Univ., 2.Univ. of Tsukuba, 3.JSPS Research Fellow)

2:15 PM - 2:30 PM

[12p-A27-2] Acoustic Phonons and Their Thermal Transport in Corrugated Silicon Nanowires

〇Junichi Hattori¹, Vladimir Poborchii¹, Tetsuya Tada¹ (1.AIST)

2:30 PM - 2:45 PM

▲ [12p-A27-3] Atomistic phonon study of Hydrogen-terminated extremely thin silicon films

〇Manoharan Muruganathan¹, Hiroshi Mizuta^1,² (1.JAIST, 2.Univ. of Southampton)

2:45 PM - 3:00 PM

[12p-A27-4] Electronic properties of B- or P-doped Si quantum dots ~ Doping-site dependence of impurity levels ~

〇Chioko Kaneta¹ (1.FUJITSU LABORATORIES Ltd.)

3:00 PM - 3:15 PM

[12p-A27-5] Ab initio analysis on the stability of metal atoms in SiO₂/Si structure

〇(M2)Daiki Shibata¹ (1.Okayama Pref. Univ.)

3:15 PM - 3:30 PM

[12p-A27-6] Theory of point defects at metal/Ge interfaces: First-principles study on MIGS effects

〇Shogo Sasaki¹, Takashi Nakayama¹ (1.Chiba Univ.)

Break (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

[12p-A27-7] First-Principles calculation of defect levels and defect-formation energies in 4H-SiC

〇Nobuhiko Kato¹, Kazuyuki Okazaki¹, Hideaki Koike¹ (1.AdvanceSoft.Corp)

4:00 PM - 4:15 PM

[12p-A27-8] A CMOS Inverter Chain Analysis by Time-dependent and Three Dimensional Device Simulation

〇Masanori Harada¹, Takuhito Kuwabara¹, Yasuyuki Ookura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft)

4:15 PM - 4:30 PM

[12p-A27-9] Analysis of breakdown voltage in Si-nMOSFET with trapezoidal channel

〇Yoshihiro Yamada¹, Yasuyuki Ookura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft Corporation)

4:30 PM - 4:45 PM

[12p-A27-10] Mixedmode Simulation with Simplified SBD model

〇Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Jun Komachi¹, Hiroyuki Ito¹, Yutaka Akiyama¹ (1.STARC)

4:45 PM - 5:00 PM

[12p-A27-11] On the iteration loops of semiconductor device simulation with domain decomposition

〇Koichi Fukuda¹, Junichi Hattori¹, Hiroo Koshimoto¹, Tsutomu Ikegami¹ (1.AIST)

5:00 PM - 5:15 PM

[12p-A27-12] Monte Carlo Simulation of Avalanche Multiplication Effect in Ultrafast Image Sensor

〇Natsumi Minamitani¹, V. T. S. Dao², Kazuhiro Shimonomura², T. G. Etoh², Yoshinari Kamakura¹ (1.Osaka Univ., 2.Ritsumeikan Univ.)

5:15 PM - 5:30 PM

[12p-A27-13] Numerical Simulation of Soft Error Rate in Nonvolatile Memories

〇Go Wakimura¹, Kamakura Yoshinari¹ (1.Osaka Univ.)

5:30 PM - 5:45 PM

[12p-A27-14] Heavy ion induced parasitic bipolar effects in SOI-MOSFETs

〇(M1C)Kohta Yamamoto¹, Daisuke Ieki¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

5:45 PM - 6:00 PM

[12p-A27-15] Feasibility study on soft-error simulation with a model for radiation-induced increase in local temperature

〇Daisuke Kobayashi^1,², Taichi Ito¹, Kazuyuki Hirose^1,² (1.ISAS/JAXA, 2.U. Tokyo)

Session information