Symposium

Symposium » How should we behave as future scientists? - Innovative value creation of integration technology by young generations -

[12p-A29-1~11] How should we behave as future scientists? - Innovative value creation of integration technology by young generations -

Thu. Mar 12, 2015 1:00 PM - 5:00 PM A29 (6A-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:30 PM

[12p-A29-1] Young scientists, rescue the sinking ship, Japan, by creating future industries.

〇Eiichi Yamaguchi¹ (1.Kyoto Univ.)

1:30 PM - 2:00 PM

[12p-A29-2] Guiding Principles for Ultimate Integrated Systems – Discussions in the JSPS 165th Committee –

〇Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

2:00 PM - 2:15 PM

[12p-A29-3] Thermal-Aware Device Design of FinFETs for Low Power Operations

〇Tsunaki Takahashi^1,², Ken Uchida^1,² (1.Keio Univ., 2.CREST, JST)

2:15 PM - 2:30 PM

[12p-A29-4] The influence that FGA process gives for the thermal resistance of the Cr/SiO₂/Si interface

〇Arisa Kumada¹, Go Takeuchi¹, Tsutomu Miyata¹, Tsunaki Takahashi^1,², Ken Uchida^1,² (1.Dept. Electronics and Electrical Eng., Keio Univ., 2.CREST, Japan Science and Technology Agency)

2:30 PM - 2:45 PM

△ [12p-A29-5] Reduction of Schottky barrier height of metal/Ge interface through introduction of Ge₁_−xSn_x interlayer with high Sn content

〇Akihiro Suzuki¹, Shigehisa Shibayama^1,², Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,³ (1.Nagoya Univ., 2.JSPS (DC), 3.ESI, Nagoya Univ.)

2:45 PM - 3:00 PM

[12p-A29-6] Study for hydrogen annealing effect after nitrogen plasma cleaning on interface of HfO₂/Al₂O₃/In_0.53Ga_0.47As

〇Seiko Netsu¹, Toru Kanazawa^1,², Yasuyuki Miyamoto^1,² (1.Tokyo Inst., 2.Tokyo Inst Grad.)

Break (3:00 PM - 3:15 PM)

3:15 PM - 3:45 PM

[12p-A29-7] LSI Diversification in the Future with 3-D Integration Technology

〇Tetsu TANAKA¹ (1.Tohoku Univ.)

3:45 PM - 4:00 PM

[12p-A29-8] Effects of CTE mismatch between different materials on transistor performance in 3D integration

〇Hisashi Kino¹, Shunsuke Ikegaya², Mitsumasa Koyanagi³, Tetsu Tanaka⁴ (1.FRIS Tohoku Univ., 2.School of Engineering, Tohoku Univ., 3.NICHe Tohoku Univ., 4.Graduate School of Biomedical Engineering, Tohoku Univ.)

4:00 PM - 4:30 PM

[12p-A29-9] Ultraflexible organic devices for biological information sensing

〇Takao Someya^1,² (1.Univ. of Tokyo, 2.JST/ERATO)

4:30 PM - 4:45 PM

[12p-A29-10] Property Improvements in Sputter-Deposited MoS₂ Film by Substrate Flattening

〇Takumi Ohashi¹, Shimpei Yamaguchi¹, Kentarou Matsuura¹, Kohei Suda², Seiya Ishihara², Naomi Sawamoto², Kuniyuki Kakushima¹, Nobuyuki Sugii¹, Akira Nishiyama¹, Yoshinori Kataoka¹, Kenji Natori¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyo Tech., 2.Meiji. Univ.)

4:45 PM - 5:00 PM

[12p-A29-11] Field-Effect Three-Terminal Device with Metal-Insulator Transition in VO₂ Thin Films

〇Takeaki Yajima^1,², Tomonori Nishimura^1,², Akira Toriumi^1,² (1.Univ. of Tokyo, 2.JST-CREST)

Session information

[12p-A29-1~11] How should we behave as future scientists? - Innovative value creation of integration technology by young generations -

[12p-A29-1] Young scientists, rescue the sinking ship, Japan, by creating future industries.

[12p-A29-2] Guiding Principles for Ultimate Integrated Systems – Discussions in the JSPS 165th Committee –

[12p-A29-3] Thermal-Aware Device Design of FinFETs for Low Power Operations

[12p-A29-4] The influence that FGA process gives for the thermal resistance of the Cr/SiO₂/Si interface

△ [12p-A29-5] Reduction of Schottky barrier height of metal/Ge interface through introduction of Ge₁_−xSn_x interlayer with high Sn content

[12p-A29-6] Study for hydrogen annealing effect after nitrogen plasma cleaning on interface of HfO₂/Al₂O₃/In_0.53Ga_0.47As

[12p-A29-7] LSI Diversification in the Future with 3-D Integration Technology

[12p-A29-8] Effects of CTE mismatch between different materials on transistor performance in 3D integration

[12p-A29-9] Ultraflexible organic devices for biological information sensing

[12p-A29-10] Property Improvements in Sputter-Deposited MoS₂ Film by Substrate Flattening

[12p-A29-11] Field-Effect Three-Terminal Device with Metal-Insulator Transition in VO₂ Thin Films

Authentication

Session information

[12p-A29-1~11] How should we behave as future scientists? - Innovative value creation of integration technology by young generations -

△ [12p-A29-5] Reduction of Schottky barrier height of metal/Ge interface through introduction of Ge1−xSnx interlayer with high Sn content

Authentication

△ [12p-A29-5] Reduction of Schottky barrier height of metal/Ge interface through introduction of Ge₁_−xSn_x interlayer with high Sn content