〇Yuuya Kanazawa^1,², Shiro Toyoda^1,², Issei Ohsima^1,², Norihiko Kamata², Yukio Kashima³, Eriko Matsuura³, Satoshi Shimatani⁴, Mitsunori Kokubo⁵, Takaharu Tashiro⁵, Takafumi Ohkawa⁵, Ryuichiro Kaminura⁶, Yamato Osada⁶, Hideki Hirayama¹ (1.RIKEN, 2.Saimata Univ., 3.MARUBUN, 4.TOKYO OHKA KOGYO, 5.TOSHIBA MACHINE, 6.ULVAC)

2:45 PM - 3:00 PM

▲ [12p-B1-6] Elimination of small-angle grain boundary in AlN grown on sapphire substrate

〇(P)RYAN BANAL¹, MASATAKA IMURA¹, YASUO KOIDE¹ (1.NIMS)

3:00 PM - 3:15 PM

[12p-B1-7] Vapor phase epitaxy of AlN thick films from environmentally-friendly sources of Al powders and nitrogen gas

〇PeiTsen Wu¹, MItsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Break (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

[12p-B1-8] Ab initio-based approach for surface structure and initial growth process on AlN(1122) surface

〇Yoshitaka Takemoto¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

3:45 PM - 4:00 PM

[12p-B1-9] Improvement of deep ultraviolet emission intensity by the well layer's compositional modulation.

〇Takahiro Oohashi¹, Ryuichi Toba¹ (1.Tohoku Univ.)

4:00 PM - 4:15 PM

△ [12p-B1-10] Nonpolar High-Al-composition AlGaN Growth on SiC by MOVPE

〇hironori okumura¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (1.NTT BRL)

4:15 PM - 4:30 PM

△ [12p-B1-11] Electrical properties of high carrier concentration n-type AlGaN

〇Kunihiro Takeda¹, Kazuki Mori¹, Tomoaki Yamada¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,² (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

4:30 PM - 4:45 PM

[12p-B1-12] Growth of AlGaN (0001) epitaxial layer on Ga₂O₃ (-201) substrate

〇YOSHIKATSU MORISHIMA¹, HIRAYAMA HIDEKI², YAMASHITA YOSHIHIRO¹, IIZUKA KAZUYUKI¹, KURAMATA AKITO¹, YAMAKOSHI SHIGENOBU¹ (1.Tamura Corporation, 2.RIKEN)

4:45 PM - 5:00 PM

[12p-B1-13] Nitride-based Tunnel Junctions for deep UV-LEDs

〇Daiki Takasuka¹, Daichi Minamikawa¹, Masataka Ino¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Hiroshi Amano², Isamu Akasaki^1,³ (1.Meijo Univ., 2.Nagoya Univ., 3.ARC. Inst)

5:00 PM - 5:15 PM

△ [12p-B1-14] Investigation of monolithic white light-emitting diode with tunnel junction

〇Takahisa Kato¹, Daisuke Iida², Shunsuke Kawai¹, Satoshi Kamiyama¹, Tetuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,³ (1.Meijo Univ, 2.Tokyo Univ. of Science, 3.ARC.Inst)

Break (5:15 PM - 5:30 PM)

5:30 PM - 5:45 PM

[12p-B1-15] [Young Scientist Presentation Award Speech] Structural and optical properties of MOVPE-grown N-polar (0001) InGaN multiple quantum wells and light-emitting diodes

〇Kanako Shojiki¹, Jung-Hun Choi¹, Tomoyuki Tanikawa^1,², Takeshi Kimura^1,², Shigeyuki Kuboya¹, Takashi Hanada^1,², Ryuji Katayama^1,², Takashi Matsuoka^1,² (1.IMR, Tohoku Univ., 2.JST, CREST)

5:45 PM - 6:00 PM

△ [12p-B1-16] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

〇Akira Tamura¹, Tetsuya Yamamoto¹, Yoshio Honda¹, Hiroshi Amano^1,² (1.Nagoya Univ., 2.Akasaki Research Center)

6:00 PM - 6:15 PM

[12p-B1-17] Correlation between CL and impurities on pits formed on surface of InGaN films

〇Masatomo Sumiya^1,⁴, Naoki Toyomitsu^1,², Jianyu Wang¹, Yoshitomo Harada³, Liwen Sang¹, Takashi Skiguchi¹, Tomohiro Yamaguchi², Toru Honda² (1.NIMS, 2.Kougakuin Univ., 3.Hosei Univ., 4.JST-ALCA)

6:15 PM - 6:30 PM

[12p-B1-18] In situ X-ray diffraction measurement of GaInN single layer and GaInN/GaN superlattices on GaN

〇(B)junya ohsumi¹, koji ishihara¹, taiji yamamoto¹, motoaki iwaya¹, tetsuya takeuchi¹, satoshi kamiyama¹, isamu akasaki^1,² (1.Meijo Univ., 2.ARC,Nagoya Univ.)

6:30 PM - 6:45 PM

[12p-B1-19] Digital Alloy SMART (InN)₁/(GaN)₄ Grown by Low NH₃ Partial Pressure MOVPE

〇Kazuhide Kusakabe¹, Akihiko Yoshikawa^1,² (1.C-SGIR, Chiba Univ., 2.Kogakuin Univ)

6:45 PM - 7:00 PM

△ [12p-B1-20] Reduction of the threading dislocation density in N-polar (0001) GaN grown by selective-area MOVPE

〇Takashi Aisaka¹, Tomoyuki Tanikawa^1,², Takeshi Kimura^1,², Kanako Shojiki¹, Shigeyuki Kuboya^1,², Ryuji Katayama^1,², Takashi Matsuoka^1,², Hideto Miyake³ (1.IMR, Tohoku Univ., 2.JST-CREST, 3.Mie Univ.)

7:00 PM - 7:15 PM

[12p-B1-21] Study on thermal stability of GaN surface

〇Shunsuke Okada¹, Hideto Miyake¹, Kazumasa Hiramatsu¹, Takashi Aisaka², Tomoyuki Tanikawa², Takashi Matsuoka² (1.Mie Univ., 2.IMR, Tohoku Univ.)

7:15 PM - 7:30 PM

[12p-B1-22] TEM evaluation of low-temperature GaN buffer layer grown on sapphire substrate

〇Tohoru Matsubara^1,², Kouhei Sugimoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ., 2.UBE Sci. Analysis Lab.)

7:30 PM - 7:45 PM

[12p-B1-23] Improvement in the DUV luminescence of hexagonal boron nitride films grown by low-pressure CVD

〇Naoki Umehara¹, Atsushi Masuda¹, Takaki Shimizu², Tetsuya Kouno¹, Hiroko Kominami¹, Kazuhiko Hara^3,⁴ (1.Graduate school of Eng., Shizuoka Univ., 2.Faculty of Eng., Shizuoka Univ., 3.Graduate school of Sci. and Tech., Shizuoka Univ., 4.Res. Inst. of Electronics, Shizuoka Univ.)

Session information

[12p-B1-1~23] 15.4 III-V-group nitride crystals

[12p-B1-1] [Kashiko Kodate Award Speech] Crystal growth of thin film hetero-structures for compound semiconductor-based alloys

[12p-B1-2] Effects of c-plane-sapphire off angle on MOVPE grown AlN

[12p-B1-3] Influences of c-plane sapphire surface on AlN growth by MOVPE

△ [12p-B1-4] MOVPE of (0001)AlN on NH₃ annealed (11-20) sapphire substrates

[12p-B1-5] Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate

▲ [12p-B1-6] Elimination of small-angle grain boundary in AlN grown on sapphire substrate

[12p-B1-7] Vapor phase epitaxy of AlN thick films from environmentally-friendly sources of Al powders and nitrogen gas

[12p-B1-8] Ab initio-based approach for surface structure and initial growth process on AlN(1122) surface

[12p-B1-9] Improvement of deep ultraviolet emission intensity by the well layer's compositional modulation.

△ [12p-B1-10] Nonpolar High-Al-composition AlGaN Growth on SiC by MOVPE

△ [12p-B1-11] Electrical properties of high carrier concentration n-type AlGaN

[12p-B1-12] Growth of AlGaN (0001) epitaxial layer on Ga₂O₃ (-201) substrate

[12p-B1-13] Nitride-based Tunnel Junctions for deep UV-LEDs

△ [12p-B1-14] Investigation of monolithic white light-emitting diode with tunnel junction

[12p-B1-15] [Young Scientist Presentation Award Speech] Structural and optical properties of MOVPE-grown N-polar (0001) InGaN multiple quantum wells and light-emitting diodes

△ [12p-B1-16] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

[12p-B1-17] Correlation between CL and impurities on pits formed on surface of InGaN films

[12p-B1-18] In situ X-ray diffraction measurement of GaInN single layer and GaInN/GaN superlattices on GaN

[12p-B1-19] Digital Alloy SMART (InN)₁/(GaN)₄ Grown by Low NH₃ Partial Pressure MOVPE

△ [12p-B1-20] Reduction of the threading dislocation density in N-polar (0001) GaN grown by selective-area MOVPE

[12p-B1-21] Study on thermal stability of GaN surface

[12p-B1-22] TEM evaluation of low-temperature GaN buffer layer grown on sapphire substrate

[12p-B1-23] Improvement in the DUV luminescence of hexagonal boron nitride films grown by low-pressure CVD

Authentication

Session information

[12p-B1-1~23] 15.4 III-V-group nitride crystals

△ [12p-B1-4] MOVPE of (0001)AlN on NH3 annealed (11-20) sapphire substrates

▲ [12p-B1-6] Elimination of small-angle grain boundary in AlN grown on sapphire substrate

△ [12p-B1-10] Nonpolar High-Al-composition AlGaN Growth on SiC by MOVPE

△ [12p-B1-11] Electrical properties of high carrier concentration n-type AlGaN

△ [12p-B1-14] Investigation of monolithic white light-emitting diode with tunnel junction

△ [12p-B1-16] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

△ [12p-B1-20] Reduction of the threading dislocation density in N-polar (0001) GaN grown by selective-area MOVPE

Authentication

△ [12p-B1-4] MOVPE of (0001)AlN on NH₃ annealed (11-20) sapphire substrates