[12p-P14-1~3] 15.1 Bulk crystal growth

Thu. Mar 12, 2015 4:00 PM - 6:00 PM P14 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

▲ [12p-P14-1] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals

〇Omprakash Muthusamy¹, Arivanandhan Mukannan¹, Tadanobu Koyama¹, Yoshimi Momose¹, Hiroya Ikeda¹, Hirokazu Tatsuoka¹, Yasunori Okano², Tetsuo Ozawa³, Yuko Inatomi⁴, Bhattacharya Shovit⁵, Aswal Dinesh⁵, MoorthyBabu Sridharan⁶, Yasuhiro Hayakawa¹ (1.RIE Shizuoka Univ, 2.Osaka Univ., 3.Shizuoka Insti Sci., 4.JAXA, 5.BARC, 6.Anna Univ)

4:00 PM - 6:00 PM

[12p-P14-2] Growth and Characterization of RuO₂ Single Crystals

〇Kazuhiro Yamaki¹, Yoshihiro Bamba¹, Akinobu Irie¹ (1.Utsunomiya Univ.)

4:00 PM - 6:00 PM

[12p-P14-3] Examination of Se addition effect for the growth of high quality AgGaSe₂ single crystal (II)

〇Masami Susaki¹ (1.OPUCT)

Session information

[12p-P14-1~3] 15.1 Bulk crystal growth

▲ [12p-P14-1] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals

[12p-P14-2] Growth and Characterization of RuO₂ Single Crystals

[12p-P14-3] Examination of Se addition effect for the growth of high quality AgGaSe₂ single crystal (II)

Authentication

Session information

[12p-P14-1~3] 15.1 Bulk crystal growth

▲ [12p-P14-1] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals

[12p-P14-2] Growth and Characterization of RuO2 Single Crystals

[12p-P14-3] Examination of Se addition effect for the growth of high quality AgGaSe2 single crystal (II)

Authentication

[12p-P14-2] Growth and Characterization of RuO₂ Single Crystals

[12p-P14-3] Examination of Se addition effect for the growth of high quality AgGaSe₂ single crystal (II)