Session information

Poster presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[12p-P17-1~7] 15.5 Group IV crystals and alloys

Thu. Mar 12, 2015 4:00 PM - 6:00 PM P17 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[12p-P17-1] Mushroom-Like Nano Structured Germanium

〇Masami Aono¹, Hiroshi Abe¹, Hisashi Miyazaki¹ (1.NDA)

4:00 PM - 6:00 PM

[12p-P17-2] Detection of Effect of Strain and Composition on the Valence Band of SiGe by HXPES with High Spatial Resolution and XPS

〇Shunta Yamahori¹, Tomoya Sasago¹, Eisuke Yonekura¹, Kentarou Sawano¹, Eiji Ikenaga², Hiroshi Nohira¹ (1.Tokyo City Univ., 2.JASRI)

4:00 PM - 6:00 PM

[12p-P17-3] Characterization of MOSFETs fabricated on strained Si/Si_1-xC_x/Si(001) structures formed by using ion-implantation technique

〇Ryo Nakagomi¹, Shoichiro Sakai¹, Kosuke Fujiwara¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kentaro Sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

4:00 PM - 6:00 PM

[12p-P17-4] Influence of growth rate on surface morphologies of tensile-strained Si/relaxed SiGe/Si(110) heterostructures

〇naoto utsuyama¹, kei sato¹, keisuke arimoto¹, junji yamanaka¹, kiyokazu nakagawa¹, noritaka usami², kentaro sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

4:00 PM - 6:00 PM

[12p-P17-5] Relation between crystallinity and impurity activation process in strained Si/Si_1-xC_x/Si(001) heterostructures

〇Kosuke Fujiwara¹, Shoichiro Sakai¹, Shota Kobayashi¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kentaro Sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

4:00 PM - 6:00 PM

[12p-P17-6] Optical and structural properties of Si_xC_1-x alloy thin films prepared by RF magnetron sputtering

〇(M1)Atsuki Kusunoki¹, Hiroki Hara¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

4:00 PM - 6:00 PM

[12p-P17-7] Transport properties of n-type Ge-on-Inslator (GOI) fabricated with P in-situ doping

〇Hironori Katsumata¹, Tomonori Nagashima¹, Kouhei Hamaya², Kentaro Sawano¹ (1.Tokyo City Univ., 2.Osaka Univ.)

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Session information

[12p-P17-1~7] 15.5 Group IV crystals and alloys

[12p-P17-1] Mushroom-Like Nano Structured Germanium

[12p-P17-2] Detection of Effect of Strain and Composition on the Valence Band of SiGe by HXPES with High Spatial Resolution and XPS

[12p-P17-3] Characterization of MOSFETs fabricated on strained Si/Si1-xCx/Si(001) structures formed by using ion-implantation technique

[12p-P17-4] Influence of growth rate on surface morphologies of tensile-strained Si/relaxed SiGe/Si(110) heterostructures

[12p-P17-5] Relation between crystallinity and impurity activation process in strained Si/Si1-xCx/Si(001) heterostructures

[12p-P17-6] Optical and structural properties of SixC1-x alloy thin films prepared by RF magnetron sputtering

[12p-P17-7] Transport properties of n-type Ge-on-Inslator (GOI) fabricated with P in-situ doping

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[12p-P17-3] Characterization of MOSFETs fabricated on strained Si/Si_1-xC_x/Si(001) structures formed by using ion-implantation technique

[12p-P17-5] Relation between crystallinity and impurity activation process in strained Si/Si_1-xC_x/Si(001) heterostructures

[12p-P17-6] Optical and structural properties of Si_xC_1-x alloy thin films prepared by RF magnetron sputtering