Session information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[13a-A25-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[13a-A25-1] [Young Scientist Presentation Award Speech] Evaluation of Ag diffusion coefficient and control of diffusion depth in Mg₂Si pn-junction diode

〇Nobuhiko Hori¹, Fumitaka Esaka², Haruhiko Udono¹ (1.Ibaraki Univ., 2.JAEA)

9:15 AM - 9:30 AM

[13a-A25-2] Fabrication of mesa-structured Mg₂Si photodiode with ring-electrod

〇Kenta Daitoku¹, Nobuhiko Hori¹, Syuntaro Tanigawa², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

9:30 AM - 9:45 AM

[13a-A25-3] Characteristic evaluation of Mg₂Si film formed by annealing of Mg/Si laminate structure

〇Hiroki Hasegawa¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyam², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech FRC, 2.IGSSE)

9:45 AM - 10:00 AM

[13a-A25-4] Bulk crystal growth of Mg₂Si by liquid encapsulated VGF method

〇Reo Nakagawa¹, Hiroki Wada¹, Hiroshi Katsumata¹, Shiro Sakuragi², Satoshi Hashimoto² (1.Meiji Univ., 2.Union Materials Inc.)

10:00 AM - 10:15 AM

[13a-A25-5] Cross-sectional TEM observation of Ni-Mg₂Si interface prepared by SPS method (2)

〇Hiroharu Sugawara¹, Yuki Yamazaki¹, Shin'ichi Nakamura², Shigeyuki Nakamura³, Yoshihisa Mori⁴, Ken'ichi Takarabe⁴ (1.Tokyo Metro. U., 2.Aoyama Gakuin U., 3.Tsuyama Coll. Tech., 4.Okayama U. Sci.)

10:15 AM - 10:30 AM

[13a-A25-6] Consideration on the Synthesis Pressure Effect of Lattice Defects of Mg₂Si

〇Yoji Imai¹, Yoshihisa Mori², Shigeyuki Nakamura³, Ken-ichi Takarabe² (1.AIST, 2.Okayama Univ. Sci., 3.Tsuyama Natl. College Technol.)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[13a-A25-7] Photoluminescence properties of β-FeSi₂ grown on Au-coated Si substrates

〇Kensuke Akiyama^1,², Hiroshi Funakubo² (1.Kanagawa Ind. Tech. Cen., 2.Tokyo Inst. Tech.)

11:00 AM - 11:15 AM

[13a-A25-8] Transport properties in β-FeSi₂ polycrystalline films

〇(M1C)Takahiko Higashi¹, Shota Nakayama¹, Tetsu Hattori¹, Yusuke Mimura¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Yoshikazu Terai¹ (1.Kagoshima Univ.)

11:15 AM - 11:30 AM

[13a-A25-9] Formation of amorphous Si/β-FeSi₂ composite thin films by co-sputtering

〇(M1)masashi sawata¹, masahiro nakazawa¹, hiroshi katsumata¹ (1.Meiji Univ.)

11:30 AM - 11:45 AM

[13a-A25-10] High Density Formation of Fe-silicide Nanodots Induced by Remote H₂ Plasma and Characterization of Their Magnetic Properties

〇Hai Zhang¹, Katsunori Makihara¹, Akio Ohta², Yuuki Kabeya¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Nagoya Univ. VBL)

11:45 AM - 12:00 PM

[13a-A25-11] Energy bandgap of (Mn,Fe)Si_~1.7 thin films prepared by pulsed laser deposition method

〇(B)Kentaro Ishii¹, Kei Hayashi¹, Yuzuru Miyazaki¹ (1.Tohoku Univ.)

12:00 PM - 12:15 PM

▲ [13a-A25-12] Growth of CaSi₂ layers on Si substrates induced by Kirkendall void formation

Xiang Meng¹, Akiko Ueki², Haruo IMAGAWA², Hiroshi ITAHARA², 〇Hirokazu Tatsuoka³ (1.Graduate School of Science and Technology, Shizuoka Univ., 2.Toyota Central R&D Labs., Inc., 3.Graduate School of Engineering, Shizuoka Univ.)

12:15 PM - 12:30 PM

[13a-A25-13] Effect of Annealing on Structural Properties of Silicon Implanted by Xenon-ion II

〇Atsushi Kitagawa¹, Shiori Fujita¹, Hitoe Habuchi¹, Tamio Iida¹, Fumitaka Ohashi², Takayuki Ban², Tetsuji Kume², Shuichi Nonomura² (1.Gifu Natl. Coll. Technol, 2.Gifu Univ.)

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