Session information

Poster presentation

15 Crystal Engineering » 15.7 Fundamentals of epitaxy

[13a-P16-1~2] 15.7 Fundamentals of epitaxy

Fri. Mar 13, 2015 9:30 AM - 11:30 AM P16 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[13a-P16-1] Fundamental study on growth α-(AlGa)₂O₃ alloys by mist CVD -A study on growth rate of α-Al₂O₃ compared with α-Ga₂O₃-

〇(B)Mikio Takahashi¹, Takumi Hatakeyama¹, Takeyoshi Onuma^1,², Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ., 2.TNCT)

9:30 AM - 11:30 AM

[13a-P16-2] Determination mechanism of vertical growth rate by spiral step source in GaAs microchannel epitaxy

〇Yosuke Mizuno¹, Masafumi Tomita¹, Hiroyuki Takakura¹, Muneki Iwakawa¹, Daisuke Kambayasi¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

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