Oral presentation

15 Crystal Engineering » 15.2 II-VI and related compounds

[13p-A17-1~11] 15.2 II-VI and related compounds

Fri. Mar 13, 2015 4:15 PM - 7:15 PM A17 (6A-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

[13p-A17-1] Improvement of the domain structure of the ZnTe film using the high-temperature ZnTe buffer layer

〇Takayuki Aiba¹, Taizo Nakasu¹, Sotaro Yamashita¹, Shota Hattori¹, Takeru Kizu¹, Wei-Che Sun¹, Kosuke Taguri¹, Fukino Kazami¹, Yuki Hashimoto¹, Shun Ozaki¹, Masakazu Kobayashi^1,², Toshiaki Asahi³ (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. Lab. for Mat. Sci.&Tech., 3.JX Nippon Mining & Metals Corporation)

4:30 PM - 4:45 PM

[13p-A17-2] Improvement of the domain structure of ZnTe film using the surface step structure

〇Takeru Kizu¹, Taizo Nakasu¹, Sotaro Yamashita¹, Takayuki aiba¹, Shota Hattori¹, Wei-Che Sun¹, Kosuke Taguri¹, Fukino Kazami¹, Shun Ozaki¹, Yuki Hashimoto¹, Masakazu Kobayashi^1,², Toshiaki Asahi³ (1.Waseda Univ, 2.Waseda Univ Lab. for Mat. Sci.&Tech, 3.JX)

4:45 PM - 5:00 PM

[13p-A17-3] Improvement of the domain structure of the ZnTe film using vicinal a-plane sapphire

〇Sotaro Yamashita¹, taizo nakasu¹, takeru kizu¹, takayuki aiba¹, shota hattori¹, wei-che sun¹, kosuke taguri¹, hukino kazami¹, yuki hashimoto¹, shun ozaki¹, masakazu kobayashi^1,², toshiaki asahi³ (1.Waseda Univ. Dep. of Elec. Eng. and Biosci., 2.Waseda Univ. Lab. for Mat. Sci. & Tech., 3.JX Nippon Mining & Metals Corporation)

5:00 PM - 5:15 PM

△ [13p-A17-4] The growth and the characterization of ZnTe films on S-plane sapphire substrates

〇Taizo Nakasu¹, Sotaro Yamashita¹, Takayuki Aiba¹, Takeru Kizu¹, Shota Hattori¹, Wei-Che Sun¹, Kosuke Taguri¹, Fukino Kazami¹, Shun Ozaki¹, Yuki Hashimoto¹, Masakazu Kobayashi^1,², Toshiaki Asahi³ (1.Waseda Univ., 2.Waseda Univ. Lab. for Mat. Sci. & Tech., 3.JX)

5:15 PM - 5:30 PM

[13p-A17-5] Surface morphology analysis of ZnMgTe/ZnTe waveguide structures

〇Fukino Kazami¹, Wei-Che Sun¹, Kosuke Taguri¹, Taizo Nakasu¹, Takayuki Aiba¹, Sotaro Yamashita¹, Shota Hattori¹, Takeru Kizu¹, Syun Ozaki¹, Yuki Hashimoto¹, Masakazu Kobayashi^1,², Toshiaki Asahi³ (1.Waseda Univ., 2.Waseda Univ. Lab. for Mat. Sci. &Tech., 3.JX)

5:30 PM - 5:45 PM

▼ [13p-A17-6] The electro-optic signal improvement by ZnMgTe/ZnTe waveguide structures

〇WeiChe Sun¹, Kosuke Taguri¹, Fukino Kazami¹, Taizo Nakasu¹, Sotaro Yamashita¹, Takayuki Aiba¹, Takeru Kizu¹, Shota Hattori¹, Shun Ozaki¹, Yuki Hashimoto¹, Masakazu Kobayashi^1,², Toshiaki Asahi³ (1.Waseda Univ. Dept. of Elec. Eng. & Biosci., 2.Waseda Univ. Lab. for Mat. Sci. & Tech, 3.JX Nippon Mining & Metals Corp.)

Break (5:45 PM - 6:00 PM)

6:00 PM - 6:15 PM

[13p-A17-7] Investigation of p-cladding layer materials for II-VI compound semiconductor laser diodes on InP substrates

〇(B)Ryohei Kobayashi¹, Nomura Ichirou¹, Takamatsu Shingo¹, Shiraishi Tomohiro¹, Hukushima Koji¹, Kishino Katsumi¹ (1.Sophia Univ.)

6:15 PM - 6:30 PM

[13p-A17-8] Investigation of indium tin oxide p-cladding layers for II-VI compound semiconductor laser diodes on InP substrates

〇(B)Kouji Fukushima¹, Ichirou Nomura¹, Tomohiro Shiraishi¹, Shingo Takamatsu¹, Ryouhei Kobayashi¹, Katsumi Kishino¹ (1.Sophia Univ.)

6:30 PM - 6:45 PM

▲ [13p-A17-9] Preparation of Ag-Er-TiO₂nanocomposites and photo-catalytic activity

〇Prakash Natarajan¹, Karthikeyan Rajan¹, Thangaraju Dheivasigamani¹, Navaneethan Mani¹, Arivanandhan Mukannan¹, Tadanobu Koyama¹, Yasuhiro Hayakawa¹ (1.Shizuoka Univ.)

6:45 PM - 7:00 PM

[13p-A17-10] Synthesis of ZnSnN₂ crystals and Evaluation of Potential for Semiconductors

〇Fumio Kawamura¹, Takashi Taniguchi¹, Naoomi Yamada² (1.NIMS, 2.Chubu Univ.)

7:00 PM - 7:15 PM

[13p-A17-11] Reactive Sputter-Deposition of ZnSnN₂ Polycrystalline Thin Films

Tomoyuki Takeuchi¹, Xiang Cao¹, Fumio Kawamura², 〇Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS)

Session information

[13p-A17-1~11] 15.2 II-VI and related compounds

[13p-A17-1] Improvement of the domain structure of the ZnTe film using the high-temperature ZnTe buffer layer

[13p-A17-2] Improvement of the domain structure of ZnTe film using the surface step structure

[13p-A17-3] Improvement of the domain structure of the ZnTe film using vicinal a-plane sapphire

△ [13p-A17-4] The growth and the characterization of ZnTe films on S-plane sapphire substrates

[13p-A17-5] Surface morphology analysis of ZnMgTe/ZnTe waveguide structures

▼ [13p-A17-6] The electro-optic signal improvement by ZnMgTe/ZnTe waveguide structures

[13p-A17-7] Investigation of p-cladding layer materials for II-VI compound semiconductor laser diodes on InP substrates

[13p-A17-8] Investigation of indium tin oxide p-cladding layers for II-VI compound semiconductor laser diodes on InP substrates

▲ [13p-A17-9] Preparation of Ag-Er-TiO₂nanocomposites and photo-catalytic activity

[13p-A17-10] Synthesis of ZnSnN₂ crystals and Evaluation of Potential for Semiconductors

[13p-A17-11] Reactive Sputter-Deposition of ZnSnN₂ Polycrystalline Thin Films

Authentication

Session information

[13p-A17-1~11] 15.2 II-VI and related compounds

△ [13p-A17-4] The growth and the characterization of ZnTe films on S-plane sapphire substrates

▼ [13p-A17-6] The electro-optic signal improvement by ZnMgTe/ZnTe waveguide structures

▲ [13p-A17-9] Preparation of Ag-Er-TiO2 nanocomposites and photo-catalytic activity

Authentication

▲ [13p-A17-9] Preparation of Ag-Er-TiO₂nanocomposites and photo-catalytic activity