Session information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related techologies

[13p-A23-1~10] 13.5 Semiconductor devices and related techologies

Fri. Mar 13, 2015 4:15 PM - 7:00 PM A23 (6A-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

[13p-A23-1] Evaluation of sulfurization process of Mo toward large scale MoS₂ film

〇(B)kentarou matsuura¹, Takumi Ohashi¹, Shimpei Yamaguchi¹, Kohei Suda², Ishihara Seiya², Naomi Sawamoto², Kuniyuki Kakushima¹, Nobuyuki Sugii¹, Akira Nishiyama¹, Yoshinori Kataoka¹, Kenji Natori¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyo Tech., 2.Meiji Univ.)

4:30 PM - 4:45 PM

[13p-A23-2] Room Temperature Solid Diffusion between Ni and InAs

〇Takaya Magatayama¹, Koji Horiba², Hiroshi Kumigashira², Hideya Kumomi³, Hideo Hosono^1,^3,⁴, Yutaka Majima^1,³ (1.Materials and Structures Laboratory, Tokyo Institute of Technology, 2.KEK-PF, 3.Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4.Frontier Research Center, Tokyo Institute of Technology)

4:45 PM - 5:00 PM

[13p-A23-3] Floating Gate Memory Effect on Double Layer 2D-InAs XOI FET

〇Takaya Magatayama¹, Shinya Kano¹, Kuniharu Takei², Steven Chuang², Ali Javey², Hideya Kumomi³, Hideo Hosono^1,^3,⁴, Yutaka Majima^1,³ (1.Materials and Structures Laboratory, Tokyo Institute of Technology, 2.UC Berkeley, 3.Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4.Frontier Research Center, Tokyo Institute of Technology)

5:00 PM - 5:15 PM

[13p-A23-4] In-situ TEM observation of Cu/MoO_x/Al₂O₃ having double insulator layers

〇Shuichiro Hirata¹, Akihito Takahashi¹, Masaki Kudo¹, Takahiro Hiroi¹, Akitoshi Nakane¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

5:15 PM - 5:30 PM

[13p-A23-5] Influence of the heat treatment on CBRAM with Cu electrode

Akitoshi Nakane¹, Reon Katsumura¹, Takahiro Hiroi¹, Atsushi Tsurumaki-Fukuchi¹, 〇Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

Break (5:30 PM - 5:45 PM)

5:45 PM - 6:00 PM

[13p-A23-6] Control of the resistance of resistance random access memories by MOSFET

Takahiro Hiroi¹, Akitoshi Nakane¹, Reon Katsumura¹, Atsushi Tsurumaki-Fukuchi¹, 〇Masashi Arita¹, Yasuo Takahashi¹, Hirofumi Urabe², Hideyuki Ando², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

6:00 PM - 6:15 PM

△ [13p-A23-7] Analog memory operation in a Cu-MoO_x-Al resistance change memory fabricated on a MOSFET

〇Hirofumi Urabe¹, Kazumasa Tomizaki¹, Hideyuki Ando¹, Takashi Morie¹, Takahiro Hiroi², Akitoshi Nakane², Atsushi Fukichi², Masashi Arita², Yasuo Takahashi² (1.Kyushu Inst. Tech., 2.Hokkaido Univ.)

6:15 PM - 6:30 PM

[13p-A23-8] Retention Characteristics of 50 nm Al_xO_y ReRAM Array Before and After Endurance

〇Hiroki Yamazawa¹, Sheyang Ning^1,², Tomoko Ogura Iwasaki¹, Shuhei Tanakamaru¹, Koh Johguchi¹, Ken Takeuchi¹ (1.Chuo Univ., 2.Univ. of Tokyo)

6:30 PM - 6:45 PM

[13p-A23-9] Evaluation of ReRAM Write Characteristics

〇Shin Nishikawa¹, Sheyang Ning^1,², Shogo Hachiya¹, Ken Takeuchi¹ (1.Chuo Univ., 2.Tokyo Univ.)

6:45 PM - 7:00 PM

[13p-A23-10] Vertical and Horizontal Location Design of Program Voltage Generator for 3D-Integrated ReRAM/NAND Flash Hybrid SSD

〇(M1)TOMOYA ISHII¹, KOH JOHGUCHI¹, KEN TAKEUCHI¹ (1.Chuo Univ.)

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