Session information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[13p-A25-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Mar 13, 2015 4:15 PM - 7:15 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

△ [13p-A25-1] Preparation, crystal structure, and electrical properties of a novel compound in the Na–Al–Sn system

〇(M1)Masahiro Kanno¹, Takahiro Yamada¹, Hisanori Yamane¹ (1.IMRAM Tohoku Univ.)

4:30 PM - 4:45 PM

△ [13p-A25-2] Effect of iodine treatment on Na contents and induced crystal strains of Si clathrate thin films

〇(M1)Hirotaka Takeshita¹, Kentaro Sakai², Tomohiro Haraguti¹, Hidetoshi Suzuki¹, Fumitaka Ohashi³, Tetsuji Kume³, Atsuhiko Fukuyama¹, Shuichi Nonomura³, Tetsuo Ikari¹ (1.Univ. of Miyazaki Fac. of Eng., 2.Univ. of Miyazaki CRCC, 3.Gifu Univ. Fac. of Eng)

4:45 PM - 5:00 PM

[13p-A25-3] Optimization of Preparation Conditions for Precursor Film of Na doped Type II Si Clathrate

〇Masataka Nomura¹, Akiihiro Noguchi¹, Masafumi Sakagami¹, Fumitaka Ohashi¹, Tetsuji Kume¹, Takayuki Ban¹, Shuichi Nonomura¹ (1.Gifu Univ.)

5:00 PM - 5:15 PM

[13p-A25-4] Evaluation and reduction of impurities in type II Si clathrate thin films

〇Koki Uehara¹, Shogo Sunaba¹, Kazutoshi Urano¹, Fumitaka Ohashi¹, Tetsuji Kume¹, Takayuki Ban¹, Mitsuo Yamaga¹, Shuichi Nonomura¹ (1.Gifu Univ.)

5:15 PM - 5:30 PM

[13p-A25-5] Synthesis of Na doped type II Ge clathrate films on transparent substrates using Sputtered Ge films

〇Hiroyuki Manjou¹, Funato Ippei¹, Mukai Tetsuya¹, Ohashi Fumitaka¹, Ban Takayuki¹, Kume Tetsuji¹, Nonomura Shuichi¹ (1.Gifu Univ.)

5:30 PM - 5:45 PM

[13p-A25-6] Electrical properties of silicide semiconducting films composed of W-encapsulating Si clusters

〇Naoya Okada^1,², Noriyuki Uchida², Toshihiko Kanayama² (1.JST, PRESTO, 2.AIST)

5:45 PM - 6:00 PM

[13p-A25-7] Delta doping of Bi into Si crystal with using the Bi nanoline as a dopant source: Carrier transport characterization

〇Kazushi Miki^1,², Takashi Kanazawa^1,², Koichi Murata^1,², Koh'ichi Nittoh¹ (1.NIMS, 2.Univ. of Tsukuba)

6:00 PM - 6:15 PM

[13p-A25-8] Mn δ doping into IV-group semiconductors with the Mn chain as a doping source

Koichi Murata^1,², 〇Kazushi Miki^1,², Kiyofumi Nitta³, Takashi Kanazawa^1,², Satoshi Tsubomatsu^1,², Koh'ichi Nittoh¹, Osami Sakata¹, Yasuko Terada³, Tomoya Uruga³ (1.NIMS, 2.Univ. of Tsukuba, 3.JASRI)

6:15 PM - 6:30 PM

△ [13p-A25-9] Effects of Si-doped to dilute magnetic semiconductor superlattice GaGdAs / GaAs

〇Yoshiyuki Onishi¹, Takashi Yamano¹, Katsushige Yukihiro¹, Yu Harada¹, Hayato Miyagawa¹, Syun Koshiba¹, Syunsuke Nakanishi¹, Mitsuhiro Hashimoto², Toshio Takahashi² (1.Kagawa Univ., 2.ISSP)

6:30 PM - 6:45 PM

[13p-A25-10] Magnetic phase diagram and novel properties of Mn_3-xCo_xO₄

〇Shigeto Hirai¹, Ikuya Yamada², Shunsuke Yagi², Yoichi Kamihara³, Masanori Matoba³ (1.HPSTAR, 2.Osaka Pref Univ., 3.Keio Univ.)

6:45 PM - 7:00 PM

[13p-A25-11] High Temperature – High Pressure Synthesis of Rhenium Carbonitride by Using Nanoamorphous Carbon Nitride

〇Nozomu Yasui¹, Kenichi Takarabe¹, Taku Okada², Daisuke Yamazaki³, Hiroaki Ohfuji⁴, Youhei Kojima⁴ (1.Okayama Univ. Sci., 2.ISSP, Univ. Tokyo, 3.ISEI, Okayama Univ., 4.GRC, Ehime Univ.)

7:00 PM - 7:15 PM

[13p-A25-12] Raman Scattering Study in Mixed-Crystals of A- and C-rare earths

〇Yutaro Chibana¹, Akio Yamanaka¹ (1.CIST)

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