Oral presentation

Joint Session K » Joint Session K

[13p-D1-1~11] Joint Session K

Fri. Mar 13, 2015 4:15 PM - 7:15 PM D1 (16-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

[13p-D1-1] Synthesis of alpha-Ga₂O₃ bulk single crystals and these structure analysis

〇Kentaro Kaneko^1,², Masaya Oda^1,², Shizuo Fujita¹, Toshimi Hitora² (1.Kyoto Univ., 2.FLOSFIA INC.)

4:30 PM - 4:45 PM

△ [13p-D1-2] Thermodynamic Study of Thermal Stability of β-Ga₂O₃ in Mixed Flows of H₂ and N₂

〇Rie Togashi¹, Kazushiro Nomura¹, Chihiro Eguchi¹, Takahiro Fukizawa¹, Ken Goto², Hisashi Murakami¹, Yoshinao Kumagai¹, Akito Kuramata², Shigenobu Yamakoshi², Akinori Koukitu¹ (1.Tokyo Univ. of Agri. & Tech., 2.Tamura Corporation)

4:45 PM - 5:00 PM

[13p-D1-3] Evaluation of Crystal Defect in β-Ga₂O₃ Crystal (2)

〇Tetsuya Nagai¹, Kengo Noami¹, Katsuhiko Nakai¹, Toshiro Futagi¹ (1.NSST)

5:00 PM - 5:15 PM

△ [13p-D1-4] Electrical Properties of Sn-Doped Ga₂O₃ Films Grown by Mist-CVD

〇Kazuaki Akaiwa¹, Lee Sam-Dong¹, Kentro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

[13p-D1-5] Homoepitaxial growth of (-201)β -Ga₂O₃films by atmospheric pressure plasma enhanced CVD

〇Takuya Kiguchi¹, Yukinori Nose¹, Tuyoshi Uehara², Norifumi Fujimura¹ (1.Osaka Prefecture Univ., 2.Sekisui Integrated Research Inc.)

Break (5:30 PM - 5:45 PM)

5:45 PM - 6:00 PM

△ [13p-D1-6] Homoepitaxial Growth of β-Ga₂O₃ by Halide Vapor Phase Epitaxy

〇Kazushiro Nomura¹, Ken Goto², Kohei Sasaki^2,³, Katsuaki Kawara¹, Quang Tu Thieu⁴, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Masataka Higashiwaki³, Akito Kuramata², Shigenobu Yamakoshi², Bo Monemar^4,⁵, Akinori Koukitu¹ (1.Tokyo Univ. of Agri. and Tech., 2.Tamura Corp., 3.NICT, 4.TUAT GIRO, 5.Linkoping Univ.)

6:00 PM - 6:15 PM

△ [13p-D1-7] Oxygen-radical-assisted pulsed-laser deposition of gallium oxide alloy films

〇Ryo Wakabayashi¹, Mai Hattori¹, Takayoshi Oshima¹, Kohei Sasaki², Takekazu Masui², Akito Kuramata², Shigenobu Yamakoshi², Kohei Yoshimatsu¹, Akira Ohtomo^1,³ (1.Tokyo Tech., 2.Tamura Corporation, 3.MCES)

6:15 PM - 6:30 PM

△ [13p-D1-8] Evaluation of band-offset at β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ heterojunctions

〇Mai Hattori¹, Ryo Wakabayashi¹, Takayoshi Oshima¹, Kohei Sasaki², Takekazu Masui², Akito Kuramata², Sigenobu Yamakoshi², Koji Horiba^3,⁴, Hiroshi Kumigashira^3,⁴, Kohei Yoshimatsu¹, Akira Ohtomo^1,⁴ (1.Tokyo Tech., 2.Tamura Corporation, 3.PF-KEK, 4.MCES)

6:30 PM - 6:45 PM

△ [13p-D1-9] NiO buffer layer enhanced low-temperature epitaxial growth of β-Ga₂O₃ thin films by PLD

〇Daiji Fukuda¹, Daishi Shiojiri¹, Ryosuke Yamauchi¹, Nobuo Tsuchimine², Satoru Kaneko^1,³, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Inst. of Tech., 2.TOSHIMA Manu. co., Ltd., 3.Kanagawa Ind. Tech. Center)

6:45 PM - 7:00 PM

[13p-D1-10] Fabrication of MFIS structure with β-Ga₂O₃ thin film

〇Yuki Kondo¹, Akihiro Ozawa¹, Keisuke Nomura¹, Takeshi Kawae¹, Akiharu Morimoto¹ (1.Kanazawa Univ.)

7:00 PM - 7:15 PM

[13p-D1-11] Dependence of Stacking Fault Generation on Orientation of MBE-Grown β-Ga₂O₃

〇Kohei Sasaki¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp.)

Session information

[13p-D1-1~11] Joint Session K

[13p-D1-1] Synthesis of alpha-Ga₂O₃ bulk single crystals and these structure analysis

△ [13p-D1-2] Thermodynamic Study of Thermal Stability of β-Ga₂O₃ in Mixed Flows of H₂ and N₂

[13p-D1-3] Evaluation of Crystal Defect in β-Ga₂O₃ Crystal (2)

△ [13p-D1-4] Electrical Properties of Sn-Doped Ga₂O₃ Films Grown by Mist-CVD

[13p-D1-5] Homoepitaxial growth of (-201)β -Ga₂O₃films by atmospheric pressure plasma enhanced CVD

△ [13p-D1-6] Homoepitaxial Growth of β-Ga₂O₃ by Halide Vapor Phase Epitaxy

△ [13p-D1-7] Oxygen-radical-assisted pulsed-laser deposition of gallium oxide alloy films

△ [13p-D1-8] Evaluation of band-offset at β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ heterojunctions

△ [13p-D1-9] NiO buffer layer enhanced low-temperature epitaxial growth of β-Ga₂O₃ thin films by PLD

[13p-D1-10] Fabrication of MFIS structure with β-Ga₂O₃ thin film

[13p-D1-11] Dependence of Stacking Fault Generation on Orientation of MBE-Grown β-Ga₂O₃

Authentication

Session information

[13p-D1-1~11] Joint Session K

[13p-D1-1] Synthesis of alpha-Ga2O3 bulk single crystals and these structure analysis

△ [13p-D1-2] Thermodynamic Study of Thermal Stability of β-Ga2O3 in Mixed Flows of H2 and N2

[13p-D1-3] Evaluation of Crystal Defect in β-Ga2O3 Crystal (2)

△ [13p-D1-4] Electrical Properties of Sn-Doped Ga2O3 Films Grown by Mist-CVD

[13p-D1-5] Homoepitaxial growth of (-201)β -Ga2O3 films by atmospheric pressure plasma enhanced CVD

△ [13p-D1-6] Homoepitaxial Growth of β-Ga2O3 by Halide Vapor Phase Epitaxy

△ [13p-D1-7] Oxygen-radical-assisted pulsed-laser deposition of gallium oxide alloy films

△ [13p-D1-8] Evaluation of band-offset at β-(AlxGa1-x)2O3/β-Ga2O3 heterojunctions

△ [13p-D1-9] NiO buffer layer enhanced low-temperature epitaxial growth of β-Ga2O3 thin films by PLD

[13p-D1-10] Fabrication of MFIS structure with β-Ga2O3 thin film

[13p-D1-11] Dependence of Stacking Fault Generation on Orientation of MBE-Grown β-Ga2O3

Authentication

[13p-D1-1] Synthesis of alpha-Ga₂O₃ bulk single crystals and these structure analysis

△ [13p-D1-2] Thermodynamic Study of Thermal Stability of β-Ga₂O₃ in Mixed Flows of H₂ and N₂

[13p-D1-3] Evaluation of Crystal Defect in β-Ga₂O₃ Crystal (2)

△ [13p-D1-4] Electrical Properties of Sn-Doped Ga₂O₃ Films Grown by Mist-CVD

[13p-D1-5] Homoepitaxial growth of (-201)β -Ga₂O₃films by atmospheric pressure plasma enhanced CVD

△ [13p-D1-6] Homoepitaxial Growth of β-Ga₂O₃ by Halide Vapor Phase Epitaxy

△ [13p-D1-8] Evaluation of band-offset at β-(Al_xGa_1-x)₂O₃/β-Ga₂O₃ heterojunctions

△ [13p-D1-9] NiO buffer layer enhanced low-temperature epitaxial growth of β-Ga₂O₃ thin films by PLD

[13p-D1-10] Fabrication of MFIS structure with β-Ga₂O₃ thin film

[13p-D1-11] Dependence of Stacking Fault Generation on Orientation of MBE-Grown β-Ga₂O₃