Session information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

[13p-D4-1~11] 15.3 III-V-group epitaxial crystals

Fri. Mar 13, 2015 4:15 PM - 7:00 PM D4 (16-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

[13p-D4-1] Properties of MBE grown InAlAs on (111) InP

〇masaki harumoto¹ (1.Osaka Pref Univ.)

4:30 PM - 4:45 PM

[13p-D4-2] Luminescence properties of GaAsN alloy grown by surface nitridation

〇Noriyuki Urakami¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,², Akihiro Wakahara¹ (1.Toyohashi Tech., 2.EIIRIS)

4:45 PM - 5:00 PM

[13p-D4-3] Rapid thermal annealing of epitaxial two-dimensional nitrogen atomic sheet in GaAs

〇Yukihiro Harada¹, Yasuhiro Ogawa¹, Takeshi Baba¹, Toshiyuki Kaizu¹, Takashi Kita¹ (1.Kobe Univ.)

5:00 PM - 5:15 PM

[13p-D4-4] Improved crystalline quality of lattice-matched GaAsPN alloys on Si substrate

〇Shun Mugikura¹, Noriyuki Urakami¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,², Akihiro Wakahara¹ (1.Toyohashi Tech., 2.Toyohashi Tech. EIIRIS.)

5:15 PM - 5:30 PM

[13p-D4-5] MBE Growth of GaN/Ga(N)As on Substrates

〇(M2)shun kabuto¹, yuko nakai¹, kenpei yamasaki¹, yasuhiro tanaka¹, naoshi takahashi¹, mitsuhiro hashimoto², toshio takahashi², hidefumi akiyama², shyun koshiba¹ (1.Kagawa Univ., 2.ISSP)

5:30 PM - 5:45 PM

[13p-D4-6] Growth of InGaAs/GaAs MQW on Si substrate by using MOVPE grown Ge buffer layer

〇Ryo Nakao^1,², Masakazu Arai^1,², Tsuyoshi Yamamoto¹, Shinji Matsuo^1,² (1.NTT Device Technology Labs., 2.Nanophotonics Center)

5:45 PM - 6:00 PM

[13p-D4-7] Local Composition Analysis of Ternary Compound Semiconductors by Selective Area Metal Organic Chemical Vapor Deposition in Narrow Trenches

〇Daisuke Ohba¹, Yoshiyuki Kondo¹, Isao Gunji¹, Yoji Iizuka¹, Masakazu Sugiyama², Shigetoshi Hosaka¹ (1.Tokyo Electron Ltd., 2.The Univ. of Tokyo)

6:00 PM - 6:15 PM

[13p-D4-8] Growth of wurtzite AlInP on GaN substrate by MOVPE

〇Yoshihiro Hiraya¹, Fumiya Ishizaka¹, Katsuhiro Tomioka^1,², Takashi Fukui¹ (1.GS-IST and RCIQE, Hokkaido Univ., 2.JST-PRESTO)

6:15 PM - 6:30 PM

[13p-D4-9] Growth temperature dependence of crystal structure of low-temperature-grown In_xGa_1-xAs

〇Yoriko Tominaga¹, Shingo Hirose¹, Yutaka Kadoya¹ (1.Hiroshima Univ.)

6:30 PM - 6:45 PM

[13p-D4-10] Optimization of thermal cleaning process for GaSb substrate

〇Haruki Yokoyama^1,³, Takuya Hoshi^1,³, Hiroki Sugiyama^1,³, Koichi Nishi^2,³, Mitsuru Takenaka^2,³, Shinichi Takagi^2,³ (1.NTT, 2.The Univ. of Tokyo, 3.JST CREST)

6:45 PM - 7:00 PM

△ [13p-D4-11] Thermal annealing of Thin Film InSb on Mica and Glass Substrate

〇(M2)Charith Jayanada Koswaththage¹, Takashi Noguchi¹, Shinichi Taniguchi², Shokichi Yoshitome² (1.Univ. of the Ryukyus, 2.e-tec INC.)

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