Poster presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[13p-P16-1~4] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P16 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:30 PM - 6:30 PM

[13p-P16-1] Configurational stability and electronic structure of the Al, N doped Si

〇Tomoe Yayama¹, Chikyo Toyohiro¹ (1.NIMS)

4:30 PM - 6:30 PM

[13p-P16-2] Impact of annealing conditions for atomic-scale morphology of Ge surfaces

〇Yukinori Morita¹, Hiroyuki Ota¹, Meishoku Masahara¹, Tatsuro Maeda¹ (1.AIST)

4:30 PM - 6:30 PM

[13p-P16-3] Conditions of wet etching process for Ga-In-O thin films

〇(B)Kuniaki Yoshida¹, Shuhei Fujioka¹, Ryosuke Goto¹, Takeyoshi Onuma^1,², Hiroki Nagai¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ., 2.TNCT.)

4:30 PM - 6:30 PM

[13p-P16-4] Study on the Electrical Characteristics which Used Self-bias Channel MOS Diode for Photovoltaic Cell

〇Daisuke Yamada¹, Kudoh Tsugutomo¹, Sugawara Fumihiko² (1.Kanagawa inst., 2.Tohoku Univ.)

Session information

[13p-P16-1~4] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[13p-P16-1] Configurational stability and electronic structure of the Al, N doped Si

[13p-P16-2] Impact of annealing conditions for atomic-scale morphology of Ge surfaces

[13p-P16-3] Conditions of wet etching process for Ga-In-O thin films

[13p-P16-4] Study on the Electrical Characteristics which Used Self-bias Channel MOS Diode for Photovoltaic Cell

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