Oral presentation

8 Plasma Electronics » 8.4 Plasma etching

[14a-A27-1~15] 8.4 Plasma etching

Sat. Mar 14, 2015 9:00 AM - 1:00 PM A27 (6A-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[14a-A27-1] Etching reaction of magnetic materials by CO cluster injection (2)

〇Kazuhiro Karahashi¹, Toshio Seki², Jiro Matsuo², Satashi Hamaguchi¹ (1.Osaka Univ., 2.Kyoto Univ.)

9:15 AM - 9:30 AM

△ [14a-A27-2] Effects of hydrogen radicals on etching reactions of transparent conducting oxides

〇Hu Li¹, Kazuhiro Karahashi¹, Masanaga Fukasawa², Nagahata Kazunori², Tatsumi Tetsuya², Hamaguchi Satoshi¹ (1.Osaka Univ., 2.Sony Corporation)

9:30 AM - 9:45 AM

▲ [14a-A27-3] InGaAs quantum dot fabrication by a top-down approach for optical devices applications: effect of nanoscale etching mask

〇Cedric Thomas^1,⁴, Chang-Yong Lee¹, Akio Higo², Naofumi Okamoto³, Ichiro Yamashita^3,⁴, Seiji Samukawa^1,^2,⁴ (1.Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.Nara Inst. of Info. and Technol., 4.JST-CREST)

9:45 AM - 10:00 AM

△ [14a-A27-4] Dependence of Sidewall Protection for Organic film on Wafer Temperature

〇Yusuke Fukunaga¹, Takayoshi Tsutsumi¹, Keigo Takeda¹, Kenji Ishikawa¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

10:00 AM - 10:15 AM

△ [14a-A27-5] Effects of hydrogen reaction in SiN etching by hydrofluorocarbon (HFC) plasma: molecular dynamics simulation analysis

〇(M1)Yuichi Murakami¹, Michiro Isobe¹, Keita Miyake¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Sony Corporation)

10:15 AM - 10:30 AM

[14a-A27-6] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction (2)

〇Tomohiro Kubota¹, Yoshiyuki Kikuchi¹, Seiji Samukawa^1,² (1.IFS, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ.)

10:30 AM - 10:45 AM

[14a-A27-7] Surface Rippling by Oblique Ion Incidence during Plasma Etching of Silicon: Experiments with Sheath Control Plates

〇(D)Nobuya Nakazaki¹, Soma Sonobe¹, Takumi Hatsuse¹, Haruka Matsumoto¹, Koji Eriguchi¹, Kouichi Ono¹ (1.Kyoto Univ.)

10:45 AM - 11:00 AM

[14a-A27-8] Analysis of Surface Roughness during Si Etching in Cl₂ Plasmas: Effects of Initial Surface Roughness

〇(M1)haruka matsumoto¹ (1.Kyoto Univ.)

Break (11:00 AM - 11:15 AM)

11:15 AM - 11:30 AM

[14a-A27-9] Analysis of H₂ and He Plasma-induced Damage Structures by 1/C² Method

〇Koji Eriguchi¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Kouichi Ono¹ (1.Kyoto Univ., 2.Sony Corp.)

11:30 AM - 11:45 AM

△ [14a-A27-10] Plane Orientation Dependence of Plasma-induced Si Substrate Damage Assigned by Optical Indices

〇(B)Yukimasa Okada¹, Koji Eriguchi¹, Kouichi Ono¹ (1.Kyoto Univ.)

11:45 AM - 12:00 PM

[14a-A27-11] A Model for enhancement of plasma-induced radiation damage to low-k dielectrics with Cu lines

〇Taro Ikeda¹, Koji Eriguchi², Akira Tanihara¹, Nobuhiko Yamamoto¹, Shigeru Kasai¹, Kouichi Ono² (1.Tokyo Electron Yamanashi Ltd., 2.Kyoto Univ.)

12:00 PM - 12:15 PM

△ [14a-A27-12] Microwave Annealing of Plasma-Induced Defect Structures near Si Substrate Surface

〇Takaaki Iwai¹, Koji Eriguchi³, Shohei Yamauchi², Naotaka Noro¹, Junichi Kitagawa¹, Kouichi Ono³ (1.Tokyo Electron Yamanashi Ltd., 2.Tokyo Electron Ltd., 3.Kyoto Univ.)

12:15 PM - 12:30 PM

[14a-A27-13] Etching Characteristic improvement by control technique of ion energy distribution on wafer

〇Tooru Aramaki¹, Michikazu Morimoto¹, Norihiko Ikeda¹ (1.Hitach High-Tech)

12:30 PM - 12:45 PM

△ [14a-A27-14] Emission intensity of fluorine radical in TSV plasma etching reactor for MinimaiFab

〇Taisei Motomura^1,², Kazunori Takahashi³, Yuji Kasashima¹, Fumihiko Uesugi¹, Akira Ando³, Hisato Ogiso^1,², Sommawan Khumpuang^1,², Shiro Hara^1,² (1.AIST, 2.MINIMAL, 3.Tohoku Univ.)

12:45 PM - 1:00 PM

△ [14a-A27-15] Instantaneous generation of many flaked particles in mass-production plasma etching process

〇Yuji Kasashima¹, Taisei Motomura¹, Fumihiko Uesugi¹ (1.AIST)

Session information

[14a-A27-1~15] 8.4 Plasma etching

[14a-A27-1] Etching reaction of magnetic materials by CO cluster injection (2)

△ [14a-A27-2] Effects of hydrogen radicals on etching reactions of transparent conducting oxides

▲ [14a-A27-3] InGaAs quantum dot fabrication by a top-down approach for optical devices applications: effect of nanoscale etching mask

△ [14a-A27-4] Dependence of Sidewall Protection for Organic film on Wafer Temperature

△ [14a-A27-5] Effects of hydrogen reaction in SiN etching by hydrofluorocarbon (HFC) plasma: molecular dynamics simulation analysis

[14a-A27-6] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction (2)

[14a-A27-7] Surface Rippling by Oblique Ion Incidence during Plasma Etching of Silicon: Experiments with Sheath Control Plates

[14a-A27-8] Analysis of Surface Roughness during Si Etching in Cl₂ Plasmas: Effects of Initial Surface Roughness

[14a-A27-9] Analysis of H₂ and He Plasma-induced Damage Structures by 1/C² Method

△ [14a-A27-10] Plane Orientation Dependence of Plasma-induced Si Substrate Damage Assigned by Optical Indices

[14a-A27-11] A Model for enhancement of plasma-induced radiation damage to low-k dielectrics with Cu lines

△ [14a-A27-12] Microwave Annealing of Plasma-Induced Defect Structures near Si Substrate Surface

[14a-A27-13] Etching Characteristic improvement by control technique of ion energy distribution on wafer

△ [14a-A27-14] Emission intensity of fluorine radical in TSV plasma etching reactor for MinimaiFab

△ [14a-A27-15] Instantaneous generation of many flaked particles in mass-production plasma etching process

Authentication

Session information

[14a-A27-1~15] 8.4 Plasma etching

[14a-A27-1] Etching reaction of magnetic materials by CO cluster injection (2)

△ [14a-A27-2] Effects of hydrogen radicals on etching reactions of transparent conducting oxides

▲ [14a-A27-3] InGaAs quantum dot fabrication by a top-down approach for optical devices applications: effect of nanoscale etching mask

△ [14a-A27-4] Dependence of Sidewall Protection for Organic film on Wafer Temperature

△ [14a-A27-5] Effects of hydrogen reaction in SiN etching by hydrofluorocarbon (HFC) plasma: molecular dynamics simulation analysis

[14a-A27-6] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction (2)

[14a-A27-7] Surface Rippling by Oblique Ion Incidence during Plasma Etching of Silicon: Experiments with Sheath Control Plates

[14a-A27-8] Analysis of Surface Roughness during Si Etching in Cl2 Plasmas: Effects of Initial Surface Roughness

[14a-A27-9] Analysis of H2 and He Plasma-induced Damage Structures by 1/C2 Method

△ [14a-A27-10] Plane Orientation Dependence of Plasma-induced Si Substrate Damage Assigned by Optical Indices

[14a-A27-11] A Model for enhancement of plasma-induced radiation damage to low-k dielectrics with Cu lines

△ [14a-A27-12] Microwave Annealing of Plasma-Induced Defect Structures near Si Substrate Surface

[14a-A27-13] Etching Characteristic improvement by control technique of ion energy distribution on wafer

△ [14a-A27-14] Emission intensity of fluorine radical in TSV plasma etching reactor for MinimaiFab

△ [14a-A27-15] Instantaneous generation of many flaked particles in mass-production plasma etching process

Authentication

[14a-A27-8] Analysis of Surface Roughness during Si Etching in Cl₂ Plasmas: Effects of Initial Surface Roughness

[14a-A27-9] Analysis of H₂ and He Plasma-induced Damage Structures by 1/C² Method