[14a-D4-1~10] 15.3 III-V-group epitaxial crystals

Sat. Mar 14, 2015 9:00 AM - 11:30 AM D4 (16-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▼ [14a-D4-1] GaAsBi/GaAs growth on (100) and (411)A GaAs Substrates by Molecular Beam Epitaxy

〇(D)Pallavi Patil¹, Masataka Tatebe¹, Yuh Nabara¹, Koh-ichiroh Higaki¹, Nobutaka Nishi¹, Eric Eugenio², Saburo Tanaka¹, Satoshi Shimomura¹ (1.Ehime University, 2.CIACyT UASLP)

9:15 AM - 9:30 AM

[14a-D4-2] MBE growth of GaAs/GaAsBi quantum well on (100) GaAs substrate

〇Nobutaka Nishii¹, Koichiro Higaki¹, Pallavi Patil¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (1.Ehime Univ.)

9:30 AM - 9:45 AM

[14a-D4-3] Analysis of Bi composition porofile of GaAs/GaAsBi superlattice on (100)A GaAs substrates

〇Koichiro Higaki¹, Nobutaka Nishii¹, Pallavi Patil¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (1.Ehime Univ.)

9:45 AM - 10:00 AM

[14a-D4-4] Impact of number of stacks on the self-organization of InGaP/InGaP quantum wire-like structure grown on misoriented GaAs (100) substrate

〇Manabu Mitsuhara¹, Noriyuki Watanabe¹, Haruki Yokoyama¹, Naoteru Shigekawa² (1.NTT Corporation, 2.Osaka City Univ.)

10:00 AM - 10:15 AM

[14a-D4-5] Wide-range Control of Emission Wavelength of InAs/GaAs Quantum Dots by Growth Temperature of GaAs Capping Layer

Takuya Matsumura¹, 〇Toshiyuki Kaizu^1,², Takashi Kita¹ (1.Grad.Sch.of Eng.,Kobe Univ., 2.CSREA, Kobe Univ.)

10:15 AM - 10:30 AM

[14a-D4-6] Tuning the emission wavelength of InAs quantum dots on GaAs(001) to over 1.55 μm (2)

〇Kenichi Shimomura¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

10:30 AM - 10:45 AM

[14a-D4-7] Time resolved photoluminescence for InAs quantum dot grown on InP(311)B by digital embedding method

〇Kouichi Akahane¹, Naokatsu Yamamoto¹, Tetsuya Kawanishi¹, Takehiro Tanaka², Shin-ichi Nakamura², Hideyuki Sotobayashi² (1.NICT, 2.Aoyama Gakuin Univ.)

10:45 AM - 11:00 AM

[14a-D4-8] Growth of GaP Strain-Compensated InAs/GaAs Quantum Dot and High Temperature LD operation

〇Takeo Kageyama¹, Katsuyuki Watanabe², Vo Quoc Huy², Keizo Takemasa³, Mitsuru Sugawara³, Satoshi Iwamoto^1,², Yasuhiko Arakawa^1,² (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.QD Laser, Inc.)

11:00 AM - 11:15 AM

△ [14a-D4-9] Fabrication of Self-Assembled GaAsP Nanowires by in-situ Thermal Diffusion in MBE and Repulsion Effect by Quantum Dots

〇QUOCHUY VO¹, Katsuyuki Watanabe¹, Takeo Kageyama², Satoshi Iwamoto^1,², Yasuhiko Arakawa^1,² (1.IIS, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

11:15 AM - 11:30 AM

▲ [14a-D4-10] Optimization of Growth Temperature of GaAs Nucleation Layer in InAs/GaAs Quantum Dots on Ge/Si substrate by MOCVD

〇Mohan Rajesh¹, Masao Nishioka¹, Yasuhiko Arakawa¹ (1.NanoQuine, The Univ. of Tokyo)

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