[14p-D2-1~8] 10.4 半導体・有機・光・量子スピントロニクス

2015年3月14日(土) 13:00 〜 15:00 D2 (16-102)

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13:00 〜 13:15

▲ [14p-D2-1] A phenomenological model for the helicity dependent photocurrent in a ferromagnet – insulator – semiconductor junction

〇(D)Ronel Roca¹, Nozomi Nishizawa¹, Takashi Matsuda¹, Hiro Munekata¹ (1.Tokyo Tech.)

13:15 〜 13:30

▼ [14p-D2-2] Electrical detection of the ratio of Rashba and Dresselhaus spin orbit interactions in InGaAs/InAlAs quantum wires

〇Kohei Yoshizumi¹, Makoto Kohda¹, Junsaku Nitta¹ (1.Tohoku Univ.)

13:30 〜 13:45

▲ [14p-D2-3] Spatial mapping of spin polarization in InGaAs quantum wells at high temperature using Monte Carlo simulation

〇RYOTA KUROSAWA¹, KEN MORITA¹, YOSHIHIRO ISHITANI¹ (1.Chiba Univ.)

13:45 〜 14:00

▲ [14p-D2-4] Electrical control of drifting spin coherence in GaAs quantum well

〇Yoji Kunihashi¹, Haruki Sanada¹, Hideki Gotoh¹, Koji Onomitsu¹, Makoto Kohda², Junsaku Nitta², Tetsuomi Sogawa¹ (1.NTT BRL, 2.Tohoku Univ.)

14:00 〜 14:15

▼ [14p-D2-5] Electric-Field Dependence of Coherence Time of the Electron Spin in the Diamond Nitrogen-Vacancy Center

〇Satoshi Kobayashi^1,², Hiroki Morishita¹, Shinji Miwa¹, Yoshishige Suzuki¹, Norikazu Mizuochi^1,² (1.Osaka Univ., 2.CREST)

14:15 〜 14:30

▼ [14p-D2-6] Electrical detection of nuclear magnetic resonance in GaAs using Heusler alloy Co₂MnSi

〇Takafumi Akiho¹, Yuya Ebina¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (1.Grad. School of Information Science and Technology, Hokkaido Univ.)

14:30 〜 14:45

▲ [14p-D2-7] Dynamical spin injection into solution-processed Carbon-nanotubes

〇(B)Hiroshi Nagano¹, Yuichiro Ando¹, Teruya Shinjo¹, Hiromichi Kataura², Takeshi Tanaka², Masashi Shiraishi¹ (1.Kyoto Univ., 2.AIST)

14:45 〜 15:00

[14p-D2-8] シリコン上酸化マグネシウム薄膜中の常磁性欠陥評価

〇林寛¹、松村佳人¹、森下弘樹¹、小池勇人²、三輪真嗣¹、水落憲和¹、鈴木義茂¹ (1.大阪大学, 2.TDK)

セッション情報

[14p-D2-1~8] 10.4 半導体・有機・光・量子スピントロニクス

▲ [14p-D2-1] A phenomenological model for the helicity dependent photocurrent in a ferromagnet – insulator – semiconductor junction

▼ [14p-D2-2] Electrical detection of the ratio of Rashba and Dresselhaus spin orbit interactions in InGaAs/InAlAs quantum wires

▲ [14p-D2-3] Spatial mapping of spin polarization in InGaAs quantum wells at high temperature using Monte Carlo simulation

▲ [14p-D2-4] Electrical control of drifting spin coherence in GaAs quantum well

▼ [14p-D2-5] Electric-Field Dependence of Coherence Time of the Electron Spin in the Diamond Nitrogen-Vacancy Center

▼ [14p-D2-6] Electrical detection of nuclear magnetic resonance in GaAs using Heusler alloy Co₂MnSi

▲ [14p-D2-7] Dynamical spin injection into solution-processed Carbon-nanotubes

[14p-D2-8] シリコン上酸化マグネシウム薄膜中の常磁性欠陥評価

認証

セッション情報

[14p-D2-1~8] 10.4 半導体・有機・光・量子スピントロニクス

▲ [14p-D2-1] A phenomenological model for the helicity dependent photocurrent in a ferromagnet – insulator – semiconductor junction

▼ [14p-D2-2] Electrical detection of the ratio of Rashba and Dresselhaus spin orbit interactions in InGaAs/InAlAs quantum wires

▲ [14p-D2-3] Spatial mapping of spin polarization in InGaAs quantum wells at high temperature using Monte Carlo simulation

▲ [14p-D2-4] Electrical control of drifting spin coherence in GaAs quantum well

▼ [14p-D2-5] Electric-Field Dependence of Coherence Time of the Electron Spin in the Diamond Nitrogen-Vacancy Center

▼ [14p-D2-6] Electrical detection of nuclear magnetic resonance in GaAs using Heusler alloy Co2MnSi

▲ [14p-D2-7] Dynamical spin injection into solution-processed Carbon-nanotubes

[14p-D2-8] シリコン上酸化マグネシウム薄膜中の常磁性欠陥評価

認証

▼ [14p-D2-6] Electrical detection of nuclear magnetic resonance in GaAs using Heusler alloy Co₂MnSi