[14p-D4-1~5] 15.3 III-V-group epitaxial crystals

Sat. Mar 14, 2015 1:00 PM - 2:15 PM D4 (16-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

[14p-D4-1] Observation of surface morphology of capped InAs quantum dots: growth temperature dependence of capping layer

〇Masahiro Kakuda¹, Kazuhiro Kuruma², Jinkwan Kwoen², Yasutomo Ota¹, Katsuyuki Watanabe^1,², Satoshi Iwamoto^1,², Yasuhiko Arakawa^1,² (1.NanoQuine, 2.IIS, The Univ. of Tokyo)

1:15 PM - 1:30 PM

▲ [14p-D4-2] MBE Growth and Analysis of InAs QDs on (411) and (221) GaAs substrates.

〇(D)Eric Eugenio-Lopez^1,², Victor Hugo Mendez-Garcia¹, Satoshi Shimomura² (1.CIACyT UASLP, 2.Ehime University)

1:30 PM - 1:45 PM

[14p-D4-3] Self-formation of ultrahigh-density InAs quantum dots (10¹² cm^-2) on InAsSb layers (3)

〇(M1)Kazuki Sameshima¹, Koichi Yamaguchi¹ (1.UEC)

1:45 PM - 2:00 PM

△ [14p-D4-4] Fabrication of low-density InAs quantum dots on InP(311)B substrate with Step growth

〇(M2)Toru Takakuma¹, Kyoko Hosoi¹, Koichi Akahane², Junko Ishi-Hayase¹ (1.Keio Univ., 2.NICT)

2:00 PM - 2:15 PM

[14p-D4-5] MBE growth of InAs quantum dots on GaAs substrates patterned through porous aluminum mask

〇Takenori Yamazaki¹, Mai Sogame¹, Yoshitaka Morishita¹ (1.Tokyo Univ. of Agri. & Tech)

Session information

[14p-D4-1~5] 15.3 III-V-group epitaxial crystals

[14p-D4-1] Observation of surface morphology of capped InAs quantum dots: growth temperature dependence of capping layer

▲ [14p-D4-2] MBE Growth and Analysis of InAs QDs on (411) and (221) GaAs substrates.

[14p-D4-3] Self-formation of ultrahigh-density InAs quantum dots (10¹² cm^-2) on InAsSb layers (3)

△ [14p-D4-4] Fabrication of low-density InAs quantum dots on InP(311)B substrate with Step growth

[14p-D4-5] MBE growth of InAs quantum dots on GaAs substrates patterned through porous aluminum mask

Authentication

Session information

[14p-D4-1~5] 15.3 III-V-group epitaxial crystals

[14p-D4-1] Observation of surface morphology of capped InAs quantum dots: growth temperature dependence of capping layer

▲ [14p-D4-2] MBE Growth and Analysis of InAs QDs on (411) and (221) GaAs substrates.

[14p-D4-3] Self-formation of ultrahigh-density InAs quantum dots (1012 cm-2) on InAsSb layers (3)

△ [14p-D4-4] Fabrication of low-density InAs quantum dots on InP(311)B substrate with Step growth

[14p-D4-5] MBE growth of InAs quantum dots on GaAs substrates patterned through porous aluminum mask

Authentication

[14p-D4-3] Self-formation of ultrahigh-density InAs quantum dots (10¹² cm^-2) on InAsSb layers (3)