Oral presentation

[12p-A26-1~16] 13.10/15.2 Code-sharing session

Thu. Mar 12, 2015 1:30 PM - 5:45 PM A26 (6A-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[12p-A26-1] MBE growth of Cl-doped CdTe thin films on ZnTe substrates

〇(M1)Toshiki Terasawa¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Guo¹, Mitsuhiro Nishio¹ (1.Saga Univ.)

1:45 PM - 2:00 PM

[12p-A26-2] MBE growth of highly-mismatched ZnCdTeO thin films

〇(B)Yuuki Okano¹, Kosuke Mizoguchi¹, Toshiki Terasawa¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Guo¹, Mitsuhiro Nishio¹ (1.Saga Univ.)

2:00 PM - 2:15 PM

△ [12p-A26-3] Pulsed laser deposition of p-type conductive transparent BaCuSF films for CdTe solar cells applications

〇Toshiyuki Kawabe¹, Hiroshi Sakakima¹, Yohei Ogawa², Aikyo Hosono², Tamotsu Okamoto², Takahiro Wada¹ (1.Ryukoku Univ., 2.Kisarazu Coll.)

2:15 PM - 2:30 PM

[12p-A26-4] Graphene Transparent Electrode for Thin-Film Compound Semiconductor Solar Cell Application

〇Ryousuke Ishikawa¹, Tomoya Oya¹, Takahiro Nomoto¹, Nozomu Tsuboi¹ (1.Niigata Univ.)

2:30 PM - 2:45 PM

[12p-A26-5] Selenization of CZTS Nanoparticle Thin Films by the Annealing under Controlled Se Vapor Pressure

〇Yuto Umejima¹, Kanami Ikari¹, Kazuki Kamimura¹, Xianfeng Zhang², Masakazu Kobayashi^1,³ (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. ICSEP, 3.Waseda Univ. Lab. for Mat. Sci. & Tech.)

2:45 PM - 3:00 PM

[12p-A26-6] Effect of UV/O₃ irradiation for Cu₂ZnSnS₄ thin film prepared by sol-gel sulfurization method II

〇HAYATO MIYAZAWA¹, KUNIHIKO TANAKA¹, HISAO UCHIKI¹ (1.Nagaoka Univ. Tech.)

3:00 PM - 3:15 PM

[12p-A26-7] Fabrication and Characterization of Cu₂ZnSnS₄ Thin Films by Mist CVD Method

〇YUICHIRO WATANABE¹, TAKUMI IKENOUE¹, MASAO MIYAKE¹, TETSUJI HIRATO¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

△ [12p-A26-8] Preparation of Cu₂ZnSnSe₄ thin films using copper naphthenate, zinc naphthenate, tin octoate and dimethylselenide

〇Ryota Yamada¹, Masahiro Tahashi¹, Makoto Takahashi¹, Kenji Yoshino², Hideo Goto¹ (1.Chubu Univ., 2.Univ. of Miyazaki)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[12p-A26-9] Cu²⁺ reduction during synthesis of Cu₂ZnSnS₄ nanoparticles in liquid phase

〇(M1)Kazuki Morishita¹, Hiroyuki Suto¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

4:00 PM - 4:15 PM

[12p-A26-10] Preparation of spray-coated solar cell using Cu₂ZnSnS₄ nanoparticle

〇Kanta Sugimoto¹, Jun Kuwana¹, Masanori Goto¹, Naoki Suyama¹, Yiwen Zhang², Yasuyoshi Kurokawa¹, Akira Yamada^1,³ (1.Dept. Physical Electronics, Tokyo Tech., 2.Technical Research Institute, Toppan Printing Co. Ltd, 3.Photovoltaics Reserch Center, Tokyo Tech.)

4:15 PM - 4:30 PM

[12p-A26-11] Measurement of band structure at the interface of window layer/CdS layer/CZTS layer using HAXPES

〇Shin Tajima¹, Keita Kataoka¹, Mitsutaro Umehara¹, Naoko Takahashi¹, Yasuji Kimoto¹, Kosuke Kitazumi¹, Noritake Isomura¹ (1.Toyota CRDL)

4:30 PM - 4:45 PM

[12p-A26-12] in-situ Characterization of Band Alignment at Zn_1-xMg_xO/Cu₂ZnSn(S, Se)₄ Interface

〇yuki suwahara¹ (1.Kagoshima Univ.)

4:45 PM - 5:00 PM

▲ [12p-A26-13] Photocarrier dynamics in Cu₂ZnSn(S_xSe_1-x)₄ single crystals: Composition dependence

〇(PC)Le Quang Phuong^1,², Makoto Okano¹, Genki Yamashita³, Masaya Nagai³, Masaaki Ashida³, Akira Nagaoka^1,⁴, Kenji Yoshino⁴, Yoshihiko Kanemitsu^1,² (1.Kyoto Univ., 2.JST-CREST, 3.Osaka Univ., 4.Univ. of Miyazaki)

5:00 PM - 5:15 PM

▲ [12p-A26-14] Suppression of nonradiative recombination centers in Cu₂ZnSnS₄ single crystals by sodium doping

5:15 PM - 5:30 PM

[12p-A26-15] Impacts of electron irradiation on the optical and electrical properties of Cu₂ZnSnS₄ solar cells

〇Satoru Aihara¹, Hidenori Sakakura¹, Hironori Katagiri², Mutsumi Sugiyama¹ (1.Faculty of Science and Technology, Tokyo Univ. of Science, 2.National Inst. of Technology, Nagaoka College)

5:30 PM - 5:45 PM

△ [12p-A26-16] Intrinsic Scattering Mechanisms in Kesterite Compounds Cu₂ZnSn(S_x, Se_1-x)₄ single crystal

〇Akira Nagaoka^1,⁵, Michael A. Scarpulla², Koichi Kakimoto³, Kenji Yoshino⁴, Yoshitaro Nose¹ (1.Kyoto Univ., 2.Utah Univ., 3.Kyushu Univ., 4.Miyazaki Univ., 5.JSPS Research Fellow)

Oral presentation

[13a-A17-1~13] 13.10/15.2 Code-sharing session

Fri. Mar 13, 2015 9:00 AM - 12:15 PM A17 (6A-207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [13a-A17-1] The Growth of Ag(Ga,Al)Te₂ on Sapphire Substrate by Closed Space Sublimation

〇Aya Uruno¹, Ayaka Usui¹, Yuji Takeda¹, Tomohiro Inoue¹, Masakazu Kobayashi^1,² (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. Lab. for Mat. Sci. & Tech.)

9:15 AM - 9:30 AM

[13a-A17-2] Crystallographic and optical properties of CuInSe₂-In₂Se₃ system

〇(PC)Tsuyoshi Maeda¹, Weiyan Gong¹, Takahiro Wada¹ (1.Ryukoku Univ.)

9:30 AM - 9:45 AM

△ [13a-A17-3] Crystallographic and optical properties of CuGaSe₂-ZnSe system

〇Yuuto Yamada¹, Tsuyoshi Maeda¹, Kouji Takei¹, Takahiro Wada¹ (1.Ryukoku Univ.)

9:45 AM - 10:00 AM

[13a-A17-4] The site selective Zn doping in p-type CIGS thin films

〇Sho Shirakata¹, Shogo Yoshida¹, Takayuki Kishida¹, Shinji Yudate¹, Akira Miyata¹ (1.Ehime Univ.)

10:00 AM - 10:15 AM

[13a-A17-5] In-situ PL measurement of CIGS thin films

〇Hirofumi Fukai¹, Kenichiro Ikemura², Kazuya Iguchi², Zacharie Jehl Li Kao¹, Ishwor Khatri¹, Isamu Matsuyama¹, Hiroshi Yamaguchi¹, Tokio Nakada¹ (1.Tokyo Univ. of Sci., 2.Hamamatsu Photonics)

10:15 AM - 10:30 AM

[13a-A17-6] Energy relaxation and diffusion dynamics of free carrieres in CuIn_1−xGa_xSe₂revealed by different optical techniques

〇Makoto Okano¹, Takeaki Sakurai², Katsuhiro Akimoto², Hajime Shibata³, Shigeru Niki³, Yoshihiko Kanemitsu^1,⁴ (1.ICR, Kyoto Univ., 2.IAP, Univ. of Tsukuba, 3.Research Center for Photovoltaic Technologies, AIST, 4.JST-CREST)

10:30 AM - 10:45 AM

▲ [13a-A17-7] Microstructure Characteristics of Cu(In, Ga)Se₂ Thin Films Investigated by TEM

〇(PC)HyungSeok Kim^1,⁴, T. Ohkubo¹, K. Hono¹, K. Yoshida², T. Nakada³ (1.NIMS, 2.Osaka Univ., 3.Tokyo Univ. of Sci., 4.LG Electronics)

10:45 AM - 11:00 AM

[13a-A17-8] Transparent Back Electrode PEDOT:PSS for Lift-off Cu(In,Ga)Se₂ Thin Film Solar Cells

〇Yutaka Niizawa¹, Hiroyuki Arai¹, Daisuke Hironiwa¹, Takashi Minemoto¹ (1.Ritsumeikan Univ.)

11:00 AM - 11:15 AM

[13a-A17-9] Using effect of rear surface passivation in CIGS solar cells

〇Sungwoo Choi¹, Yukiko Kamikawa¹, Jiro Nishinaga¹, Akimasa Yamada¹, Hajime Shibata¹, Shigeru Niki¹ (1.AIST)

11:15 AM - 11:30 AM

▲ [13a-A17-10] Effect of KF-PDT on MBE-Grown Cu(In_1-x,Ga_x)Se₂ Thin Film

〇(PC)Ishwor Khatri¹, Hirofumi Fukai¹, Isamu Matsuyama¹, Hiroshi Yamaguchi¹, Tokio Nakada¹ (1.Tokyo University of Science)

11:30 AM - 11:45 AM

[13a-A17-11] Photovoltages and Their Dependence on Incident Light Wavelengths on CIGS Solar Cells Investigated by P-KFM

〇(D)Hyeondeuk Yong¹, Takashi Minemoto³, Takuji Takahashi^1,² (1.IIS, The Univ. of Tokyo, 2.INQIE, The Univ. of Tokyo, 3.Coll. of Sci. and Eng., Ritsumeikan Univ.)

11:45 AM - 12:00 PM

[13a-A17-12] Surface potential distributions and electrostatic force spectra on CIGS observed by Kelvin probe force microscopy and electrostatic force microscopy

〇Tomoaki Ishii¹, Takashi Minemoto³, Takuji Takahashi^1,² (1.IIS, The Univ. of Tokyo, 2.INQIE, The Univ. of Tokyo, 3.Coll. of Sci. and Eng., Ritsumeikan Univ.)

12:00 PM - 12:15 PM

[13a-A17-13] [Young Scientist Presentation Award Speech] Theoretical and experimental investigation of suppression effect of interface recombination by valence band control for Cu(In,Ga)Se₂ thin film solar cells

〇Takahito Nishimura¹, Yoshiaki Hirai¹, Yasuyoshi Kurokawa¹, Akira Yamada^1,² (1.Tokyo Tech, 2.PVREC)

Poster presentation

[13p-P19-1~22] 13.10/15.2 Code-sharing session

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P19 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:30 PM - 6:30 PM

[13p-P19-1] Preparation and characterization of FeSe films by electrodeposition 2.

〇(M1)Tomonori Nagaya¹, Makoto Takahashi¹, Takaya Suzuku¹, Masahiro Tahashi¹, Sadao Ohkido¹ (1.Chubu Univ.)

4:30 PM - 6:30 PM

[13p-P19-2] The effect of changing the quantity of sulfur in acid solution for SnS thin film

〇Yu Ishikawa¹, Hisashi Miyazaki¹, Yoichi Okamoto¹, Jun Morimoto¹ (1.Natl. Def. Acad.)

4:30 PM - 6:30 PM

[13p-P19-3] Effect of Sn/S ratio on electric property of SnS thin films using sulfurization growth

〇Shuntaro Mikami¹, Tsubasa Yokoi¹, Hiroki Sumi¹, Satoru Aihara¹, Hiro Nagayasu¹, Kazuma Hisatomi¹, Mutsumi Sugiyama¹ (1.Faculty of Sci. and Tech. / RIST,Tokyo Univ. of Science)

4:30 PM - 6:30 PM

△ [13p-P19-4] Fabrication of Cu₂GeS₃-based thin film solar cells prepared by GeS₂ and S vapor reaction

〇Kotaro Chino¹, Kotoba Toyonaga¹, Ayaka Kanai¹, Hideaki Araki^1,² (1.NIT, Nagaoka College, 2.JST-PRESPO)

4:30 PM - 6:30 PM

[13p-P19-5] Fabrication of Cu₂ZnSnS₄ Thin Film Solar Cells Using Spray Pyrolysis Method

〇(B)SHOTARO FUJIKAWA¹, Hiep Nguyen Thi¹, Wilman Septina¹, TAKASHI HARADA¹, SHIGERU IKEDA¹, MATSUMURA MICHIO¹ (1.RCSEC Osaka Univ.)

4:30 PM - 6:30 PM

[13p-P19-6] Examination of Cu₂ZnSnSe₄ thin film prepared by two-stage co-evaporation method

〇Hidenori Murakami¹, Kensuke Otsuka¹, Shinji Yudate¹, Akira Miyata¹, Sho Shirakata¹ (1.Ehime Univ)

4:30 PM - 6:30 PM

[13p-P19-7] Effects of Annealing Condition on Thin Films Using Cu₂ZnSn(S,Se)₄ Nanoparticles

〇Toshimasa Suzuki¹, Tsukasa Suzuki², Shigeo Hori², Shuichi Nonomura² (1.JFCC, 2.Gifu Univ.)

4:30 PM - 6:30 PM

[13p-P19-8] Change in characteristics of three-dimensional Cu₂ZnSnS₄ solar cell due to elapsed time

〇Kunihiko Tanaka¹, Yoshiki Nagahashi¹, Takamichi Ishiyama¹, Kastuhiko Moriya², Hisao Uchiki¹ (1.Nagaoka Univ. Tech., 2.Tsuruoka NCT)

4:30 PM - 6:30 PM

[13p-P19-9] MBE Growth and Characterization of CuGaS₂ Thin Films ~Etching of excess Cu_xS by (NH₄)₂S_x~

〇Masaya Kurakake¹, Yuuki Oka¹, Masaya Matsushita¹, Hideaki Yamada¹, Tomoki Abe¹, Kunio Ichino¹ (1.Tottori Univ.)

4:30 PM - 6:30 PM

[13p-P19-10] Characterization of CIS-CGS structure on GaAs(001) substrate grown by MEE

〇kohki toyoda¹, tomotaka satou¹, ryuuki taniguchi¹, sathiabama thiru¹, yoshiji horikoshi¹, toshiki makimoto¹ (1.Waseda Univ.)

4:30 PM - 6:30 PM

[13p-P19-11] Influence on recombination process of CIGS solar cells induced by air exposure

〇Jiro Nishinaga¹, Yukiko Kamikawa¹, Sungwoo Choi¹, Hajime Shibata¹, Shigeru Niki¹ (1.AIST)

4:30 PM - 6:30 PM

[13p-P19-12] Investigation of defect stats in lead halide perovskite solar cells by using two wavelength photoluminescence and photo-capacitance spectroscopy methods

〇Kisho Nakazawa¹, Takeaki Sakurai¹, M.M. Islam¹, Katsuhiro Akimoto¹, Yuhei Ogomi², Shuzi Hayase² (1.Univ.Tsukuba, 2.Kyushu Inst. Tech.)

4:30 PM - 6:30 PM

[13p-P19-13] Thermal Desorption Analysis of Porous TiO₂ Layer Used for Perovskite Solar Cell

〇(B)Shuji Hozan¹, Adli Hasyiya Karimah¹, Takashi Harada¹, Shigeru Ikeda¹, Seigo Ito², Michio Matsumura¹ (1.Osaka Univ., 2.Univ. of Hyogo)

4:30 PM - 6:30 PM

[13p-P19-14] Comparison of photo-carrier transfer efficiency from QD to TiO₂ particles between quantum-dots-sensitized solar cells with different QD synthesis methods

〇Akira Ieyama¹, Nobuhiko Ozaki¹, Takafumi Ofuchi², Naoaki Fukuda², Minako Kato³, Toshio Takiya³ (1.Wakayama Univ., 2.Kyoto Univ., 3.Hitachi Zosen Corp.)

4:30 PM - 6:30 PM

[13p-P19-15] Control of sub-cell characteristics in InGaP/GaAs/Si triple junction cells due to AR films

〇Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ.)

4:30 PM - 6:30 PM

[13p-P19-16] GaAs/Ge surface activated bonding for multi-junction solar cells

〇Daiji Yamashita¹, Genki Kono¹, Kentaro Watanabe¹, Masakazu Sugiyama¹, Tadatomo Suga¹, Yoshiaki Nakano¹ (1.School of Engineering, The Univ. of Tokyo)

4:30 PM - 6:30 PM

[13p-P19-17] Two-Step Photoabsorption Processes in Solar Cells with GaAs:N δ-Doped Superlattices

〇Tomoya Suzuki¹, Yagi Shuhei¹, Hijikata Yasuto¹, Okada Yoshitaka², Yaguchi Hiroyuki¹ (1.Saitama Univ, 2.RCAST, The Univ. of Tokyo)

4:30 PM - 6:30 PM

▲ [13p-P19-18] GaNAs quantum structures embedded in GaAs p-i-n for Intermediate Band Solar Cell with zero valance band offset

〇Martin Elborg¹, Takeshi Noda¹, Liyuan Han¹ (1.NIMS, Tsukuba)

4:30 PM - 6:30 PM

[13p-P19-19] Photo-conductance properties of in-plane high-density InAs QD layers

〇(B)Naoki Akimoto¹, Shunsuke Uchida¹, Koichi Yamaguchi¹ (1.UEC)

4:30 PM - 6:30 PM

[13p-P19-20] Effects of hydrogen plasma pre-treatment on properties of Cu/Cu₂O based PV cell by ECR plasma fabrication

〇Takuma Nara¹, Yusuke Kikuchi¹, Naoyuki Sato¹, Takashi Ikehata¹ (1.Ibaraki Univ.)

4:30 PM - 6:30 PM

[13p-P19-21] Air exposure properties of Cu/Cu₂O PV cell by ECR plasma fabrication

〇Motoki Hasegawa¹, Yusuke Kikuchi¹, Naoyuki Sato¹, Takashi Ikehata¹ (1.Ibaraki University)

4:30 PM - 6:30 PM

[13p-P19-22] Free-standing InP Nanowire Array and Their Optical Properties Toward Resource-Saving Solar Cells

〇(M1)muyi Chen¹, Eiji Nakai¹, katsuhiro Tomioka^1,², takashi Fukui¹ (1.Graduate school of IST and RCIQE Hokkaido Univ.,, 2.JST-PRESTO)

Sessions

Code-sharing session » 13.10/15.2 Code-sharing session

[12p-A26-1~16] 13.10/15.2 Code-sharing session

△ [12p-A26-3] Pulsed laser deposition of p-type conductive transparent BaCuSF films for CdTe solar cells applications

△ [12p-A26-8] Preparation of Cu2ZnSnSe4 thin films using copper naphthenate, zinc naphthenate, tin octoate and dimethylselenide

▲ [12p-A26-13] Photocarrier dynamics in Cu2ZnSn(SxSe1-x)4 single crystals: Composition dependence

▲ [12p-A26-14] Suppression of nonradiative recombination centers in Cu2ZnSnS4 single crystals by sodium doping

△ [12p-A26-16] Intrinsic Scattering Mechanisms in Kesterite Compounds Cu2ZnSn(Sx, Se1-x)4 single crystal

[13a-A17-1~13] 13.10/15.2 Code-sharing session

△ [13a-A17-1] The Growth of Ag(Ga,Al)Te2 on Sapphire Substrate by Closed Space Sublimation

△ [13a-A17-3] Crystallographic and optical properties of CuGaSe2-ZnSe system

▲ [13a-A17-7] Microstructure Characteristics of Cu(In, Ga)Se2 Thin Films Investigated by TEM

▲ [13a-A17-10] Effect of KF-PDT on MBE-Grown Cu(In1-x,Gax)Se2 Thin Film

[13p-P19-1~22] 13.10/15.2 Code-sharing session

△ [13p-P19-4] Fabrication of Cu2GeS3-based thin film solar cells prepared by GeS2 and S vapor reaction

▲ [13p-P19-18] GaNAs quantum structures embedded in GaAs p-i-n for Intermediate Band Solar Cell with zero valance band offset

Authentication

△ [12p-A26-8] Preparation of Cu₂ZnSnSe₄ thin films using copper naphthenate, zinc naphthenate, tin octoate and dimethylselenide

▲ [12p-A26-13] Photocarrier dynamics in Cu₂ZnSn(S_xSe_1-x)₄ single crystals: Composition dependence

▲ [12p-A26-14] Suppression of nonradiative recombination centers in Cu₂ZnSnS₄ single crystals by sodium doping

△ [12p-A26-16] Intrinsic Scattering Mechanisms in Kesterite Compounds Cu₂ZnSn(S_x, Se_1-x)₄ single crystal

△ [13a-A17-1] The Growth of Ag(Ga,Al)Te₂ on Sapphire Substrate by Closed Space Sublimation

△ [13a-A17-3] Crystallographic and optical properties of CuGaSe₂-ZnSe system

▲ [13a-A17-7] Microstructure Characteristics of Cu(In, Ga)Se₂ Thin Films Investigated by TEM

▲ [13a-A17-10] Effect of KF-PDT on MBE-Grown Cu(In_1-x,Ga_x)Se₂ Thin Film

△ [13p-P19-4] Fabrication of Cu₂GeS₃-based thin film solar cells prepared by GeS₂ and S vapor reaction