[11a-A10-1~12] 13.7 Quantum properties and fabrications of nanoscale structures and devices

[11a-A10-9] Temperature dependence of PL of quantum dots grown on (113)B GaAs substrate

〇Xiangmeng Lu¹, Akihiro Kawaguchi¹, Takahiro Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (1.Tokushima Univ.)

Keywords:quantum dot,molecular beam epitaxy,AlAs cap