[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

△ [11a-A21-10] Demonstrate of a Low On-resistance 6.5kV PiN Diode Fabricated on a SiC Substrate with p+ epitaxial layer

〇Yuan Bu¹, Norifumi Kameshiro¹, Akio Shima¹, Ren-ichi Yamada¹, Yasuhiro Shimamoto¹ (1.Hitachi Ltd.)

Keywords:PiN diode,SiC