[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

[11a-A21-2] Device modeling of GaAsSb backward diodes on the basis of experimental evaluations and theoretical analysis

〇Kosuke Ono¹, Hisanari Fujita¹, Kaori Imori¹, Michihiko Suhara¹, Tsuyoshi Takahashi² (1.Tokyo Metro. Univ., 2.Fujitsu Lab.)

Keywords:backward diode,tunnel,zero-bias detection