AlGaAs/InGaAs HEMT with Atomic Layer Deposited SiO<sub>2</sub> using Bis(ethyl-methyl-amino)silane

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 9:00 AM - 12:00 PM A21 (6A-213)

9:45 AM - 10:00 AM

〇Takayuki Suzuki¹, Yosuke Takigawa¹, Dongyan Zhang¹, Shimako Naito¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

Keywords:HEMT,ALD,passivation