[11a-A21-1~11] 13.8 Compound and power electron devices and process technology

[11a-A21-6] Reduction effect of metal subcollector on thermal resistance for transferred-substrate InP HBTs

〇Yuta Shiratori^{1, 2}, Takuya Hoshi^{1, 2}, Norihide Kashio^{1, 3}, Kenji Kurishima^{1, 2}, Eiji Higurashi⁴, Hideaki Matsuzaki^{1, 2} (1.NTT Corp., 2.NTT Device Technology Labs., 3.NTT Device Innovation Center, 4.Univ. of Tokyo)

Keywords:InP heterojunction bipolar transistor (HBT),Transferred-substrate technology,thermal resistance