The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.5 Semiconductor devices and related techologies

[11a-A23-1~12] 13.5 Semiconductor devices and related techologies

Wed. Mar 11, 2015 9:00 AM - 12:15 PM A23 (6A-216)

11:45 AM - 12:00 PM

[11a-A23-11] Strain effect of vertical tunnel FET using Si/InGaAs heterounction

〇Katsuhiro Tomioka1, 2, Fumiya Ishizaka1, Eiji Nakai1, Junichi Motohisa1, Takashi Fukui1 (1.GS-IST and RCIQE, Hokkaido Univ., 2.JST-PRESTO)

Keywords:Tunnel FET,III-V nanowire,Vertical FET