The 62nd JSAP Spring Meeting, 2015

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[11a-A27-1~13] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Wed. Mar 11, 2015 9:00 AM - 12:30 PM A27 (6A-202)

9:15 AM - 9:30 AM

△ [11a-A27-2] Planarization of SiC wafers by use of a rotating Pt electrode

〇Tomoki Akai1, Kentaro Imamura1, Hikaru Kobayashi1 (1.ISIR, Osaka Univ.)

Keywords:SiC,wet etching,Pt