[11a-A27-1~13] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

△ [11a-A27-5] Evaluation of Stress Relaxation Profile in Entire-Ge-Concentration-Range Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

〇(D)Motohiro Tomita^{1, 2}, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS DC, 3.GNC, AIST)

Keywords:semiconductor,SiGe,EBSP