The 62nd JSAP Spring Meeting, 2015

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[11a-A27-1~13] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

Wed. Mar 11, 2015 9:00 AM - 12:30 PM A27 (6A-202)

11:00 AM - 11:15 AM

▼ [11a-A27-8] Band Bending Model Reproducing Si(111) Hole Subband Levels Measured by ARPES

〇Idayu Nur1, Sakura Nishino Takeda1, Takeshi J. Inagaki1, Hiroshi Daimon1 (1.NAIST)

Keywords:band bending,subband,Dopant