The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-B1-1~12] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 8:30 AM - 11:45 AM B1 (6B-101)

11:30 AM - 11:45 AM

△ [11a-B1-12] Single-crystallite (1013)GaN on the nominal Si(001) substrate by the directional sputtered AlN intermediate layer

〇Tadashi Mitsunari1, Yoshio Honda1, Hiroshi Amano1, 2 (1.Nagoya Univ., 2.Akasaki Research Center)

Keywords:sputter,Si,Semi-polar