RF-MBE Growth of AlN Thin Layers on (-201) Ga<sub>2</sub>O<sub>3</sub> Substrates

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 8:30 AM - 11:45 AM B1 (6B-101)

9:30 AM - 9:45 AM

〇Masataka Higashiwaki¹, Yoshiaki Nakata¹, Akito Kuramata², Shigenobu Yamakoshi² (1.NICT, 2.Tamura Corp.)

Keywords:gallium oxide,aluminum nitride,molecular beam epitaxy