The 62nd JSAP Spring Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-B1-1~12] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 8:30 AM - 11:45 AM B1 (6B-101)

9:30 AM - 9:45 AM

[11a-B1-5] RF-MBE Growth of AlN Thin Layers on (-201) Ga2O3 Substrates

〇Masataka Higashiwaki1, Yoshiaki Nakata1, Akito Kuramata2, Shigenobu Yamakoshi2 (1.NICT, 2.Tamura Corp.)

Keywords:gallium oxide,aluminum nitride,molecular beam epitaxy