The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-B1-1~12] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 8:30 AM - 11:45 AM B1 (6B-101)

10:30 AM - 10:45 AM

[11a-B1-8] Characteristic of contact resistivity on p-type GaN grown by pulsed sputtering

〇Hidenari Noguchi1, Yasuaki Arakawa1, Kohei Ueno1, Jitsuo Ohta1, Hiroshi Fujioka1, 2, 3 (1.IIS, The Univ. of Tokyo, 2.JST-CREST, 3.JST-ACCEL)

Keywords:GaN,Sputtering