Ge<sub>1-x</sub>Sn<sub>x</sub> Epitaxial Growth on Ge Substrate by MOCVD (2)

Kohei Suda

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[11a-D7-1~11] 15.5 Group IV crystals and alloys

Wed. Mar 11, 2015 9:00 AM - 12:00 PM D7 (16-207)

10:45 AM - 11:00 AM

△ [11a-D7-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (2)

〇Kohei Suda¹, Takahiro Kijima¹, Seiya Ishihara¹, Naomi Sawamoto¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Atsushi Ogura¹ (1.Meiji Univ., 2.Gas-phase Growth, 3.Toyota Technological Inst.)

Keywords:GeSn,MOCVD,Epitaxial growth

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Presentation information

[11a-D7-1~11] 15.5 Group IV crystals and alloys

△ [11a-D7-7] Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD (2)

△ [11a-D7-7] Ge_1-xSn_x Epitaxial Growth on Ge Substrate by MOCVD (2)