[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

[11p-A21-12] High Temperature Characteristics in AlGaN/GaN Asymmetric Open-Gate HFET with Recessed-Gate Enhanced-Barrier Structures

〇Narihiko Maeda^{1, 2}, Masanobu Hiroki², Satoshi Sasaki², Yuichi Harada² (1.Tokyo Univ. of Technology, 2.NTT Research Labs.)

Keywords:Nitride Semiconductor,Transistor,High Temperature Characteristics