The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[11p-A21-1~12] 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 2:00 PM - 5:15 PM A21 (6A-213)

3:00 PM - 3:15 PM

[11p-A21-5] Comparison of Etched AlGaN Surface between Neutral Beam Etching and Plasma Etching

〇ChangYong Lee1, Aiko Higo2, Cedric Thomas1, Tadashi Shimmura3, Seiji Samukawa1, 2, 4 (1.IFS, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.PRC, Toshiba, 4.JST-CREST)

Keywords:neutral beam etching,AlGaN