The 62nd JSAP Spring Meeting, 2015

Presentation information

Print

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related techologies

[11p-A23-1~13] 13.5 Semiconductor devices and related techologies

Wed. Mar 11, 2015 2:00 PM - 5:30 PM A23 (6A-216)

5:00 PM - 5:15 PM

[11p-A23-12] First-Principles Calculation of Electronic Properties of Isoelectronic Impurity Complex in Si TFET

〇(DC)Shota Iizuka1, Takashi Nakayama1 (1.Chiba Univ.)

Keywords:Tunnel FET,Isoelectronic Inpurity Complex,First-Principles Calculation